Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-13T07:03:30.409Z Has data issue: false hasContentIssue false
  • English
  • Français

Growing Zn0.90Co0.10O Diluted Magnetic Semiconductors by r. f. Sputtering System

Published online by Cambridge University Press:  31 January 2011

Musa Mutlu Can ,
Tezer Firat  and
Şadan Özcan
Musa Mutlu Can
Affiliation:
[email protected], University of Delaware, Material Science and Engineering, Newark, Delaware, United States
Tezer Firat
Affiliation:
[email protected], Hacettepe University, Physics Engineering, Ankara, Turkey
Şadan Özcan
Affiliation:
[email protected], Hacettepe University, Physics Engineering, Ankara, Turkey
Get access

Abstract

Zn0.90Co0.10O particles, synthesized by mechanical milling and thermal treatment, were pressed at 25 tons to form a 2” target for a radio frequency (r. f.) magnetron sputtering system. Using this target, thin films were deposited on (0001) oriented sapphire (α-Al2O3) substrates under 30W, 60W and 120W r. f. powers. Structural analyses of these films were done with X-Ray Diffractometer (XRD), Energy Dispersive X-Ray Spectrometry (EDS), X-Ray Photo Spectroscopy (XPS) and Atomic Force Microscopy (AFM). The ZnO films were deposited with (0002) preferred direction, which was coherent to (0001) ordered α-Al2O3. Impurity phases, such as Co clusters, CoO and Co3O4, were not detected with the surface analyses of Zn0.90Co0.10O thin films. Substituted Co atoms in the host ZnO matrix were identified by the binding energy peak of Co2p3/2, 781.3±0.4eV, and the energy difference of ∼15.61±0.03eV between Co2p1/2 and Co2p3/2. These results also proved that there were no Co clusters or Co3O4 phases in the lattice. Homogeneity of Co atoms in the lattice was shown by EDS spectra. It was understood that the higher r. f. power caused the more homogeneous distribution of Co and Zn atoms in thin films. Distributions of Co and Zn on the film surface, deposited under 120W, were found as 8.1±0.1% (normalized atomic ratio) and 91.7±0.7% (normalized atomic ratio), respectively, and the surface roughness of thin film was demonstrated by AFM figures as 14.2±0.1nm.

Keywords

thin filmsputteringII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-29
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Hartnagel, H. L., Dawar, A. L., Jain, A. K., and Jagadish, C., Semiconducting Transparent Thin Films, Institute of Physics Publishing, Bristol and Philadelphia, (1995).Google Scholar
[2] Bhat, S. Venkataprasad, Deepak, F. L., Sol. Stat. Comm., 135 (2005) 345–347 10.1016/j.ssc.2005.05.051Google Scholar
[3] Özgür, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doǧan, S., Avrutin, V., Cho, S.-J., Morkoç, H., J. Appl. Phys. 98, (2005) 041301 10.1063/1.1992666Google Scholar
[4] Ghosh, C. K., Das, S., Chattopadhyay, K. K., Phys. B, 399 (2007) 38–46 10.1016/j.physb.2007.05.019Google Scholar
[5] Liu, C., Yun, F., Morkoç, H., J. Mater. Scien.: Mater. Elec., 16 (2005) 555–597 Google Scholar
[6] Kim, K.-K., Song, J.-H., Jung, H.-J., Choi, W.-K., Park, S.-J., Song, J.-H., Lee, J.-Y., J. Vac. Sci. Technol. A 18 (Nov/Dec 2000) 6, 2864–2868 10.1116/1.1318192Google Scholar
[7] Wagner, C. D., Riggs, W. M., Davis, L. E., Moulder, J. F., Muilenberg, G. E. (Editor), Perkin-Elmer Corp. Handbook of x-ray photoelectron spectroscopy (1979), Pg. 84–84Google Scholar
[8] Liu, X. J., Song, C., Zeng, F., Pan, F., Thin Solid Films, 516 (2008) 8757–8761 10.1016/j.tsf.2008.07.002Google Scholar
[9] Naeem, M., Hasanain, S. K., Kobayashi, M., Ishida, Y., Fujimori, A., Buzby, S., Shah, S. I., Nanotechnology, 17 (2006) 2675–2680 10.1088/0957-4484/17/10/039Google Scholar
[10] Hays, J., Reddy, K. M., Graces, N. Y., Engelhard, M. H., Shutthanandan, V., Luo, M., Xu, C., Giles, N. C., Wang, C., Thevuthasan, S., Punnoose, A., J. Phys.: Condens. Matter. 19 (2007) 266203 Google Scholar
[11] Lakshmi, Y. Kalyana, Srinivas, K., Sreedhar, B., Raja, M. Manivel, Vithal, M., Reddy, P. Venugopal, Mater. Chem. Phys., 113 (2009) 749–755 10.1016/j.matchemphys.2008.08.021Google Scholar
[12] Lee, H.-J., Jeong, S.-Y., Cho, C. R., Park, C. H., Appl. Phys. Lett., 81 (2002) 21, 4020–4022 10.1063/1.1517405Google Scholar
[13] Manivannan, A., Seehra, M. S., Majumder, S. B., Katiyar, R. S., Appl. Phys. Lett., 83 (2003) 1, 111–113 10.1063/1.1590744Google Scholar