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Graphene Devices Processing Using Direct Writing Laser Lithography and Electrical Properties Characteristics

Published online by Cambridge University Press:  01 February 2011

Jorge Augusto Leon ,
Elmo Salomão Alves ,
Daniel Cunha Elias ,
Leandro Malard Moreira ,
Tiago Campolina Barbosa ,
Marcos Asunção Pimenta  and
Flavio Orlando Plentz
Jorge Augusto Leon
Affiliation:
[email protected], Universidade Federal de Minas Gerais, Department of Physics, Belo Horizonte, Brazil
Elmo Salomão Alves
Affiliation:
[email protected], Universidade Federal de Minas Gerais, Department of Physics, Belo Horizonte, Minas Gerais, Brazil
Daniel Cunha Elias
Affiliation:
[email protected], Universidade Federal de Minas Gerais, Department of Physics, Belo Horizonte, Minas Gerais, Brazil
Leandro Malard Moreira
Affiliation:
[email protected], Universidade Federal de Minas Gerais, Department of Physics, Belo Horizonte, Minas Gerais, Brazil
Tiago Campolina Barbosa
Affiliation:
[email protected], Universidade Federal de Minas Gerais, Department of Physics, Belo Horizonte, Minas Gerais, Brazil
Marcos Asunção Pimenta
Affiliation:
[email protected], Universidade Federal de Minas Gerais, Department of Physics, Belo Horizonte, Minas Gerais, Brazil
Flavio Orlando Plentz
Affiliation:
[email protected], Universidade Federal de Minas Gerais, Department of Physics, Belo Horizonte, Minas Gerais, Brazil
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Abstract

In this work, we establish the use of lithography technique by laser direct writing for fabricating bilayer graphene devices. This technique, which is based on direct laser writing on graphene coated with a photoresist is simple to implement, versatile, and capable of achieving good throughput. Double-layer graphene flakes were obtained by micromechanical cleavage of graphite producing large graphene samples up to 40μm in size. The presence of a bilayer of graphene on SiO2/Si substrate was verified by optical microscopy and resonant Raman spectroscopy. We have measured the four-terminal resistance as a function on the back-gate voltage and found initially p-type doping in graphene, but annealing inside cryostat at 127C° in He atmosphere, the samples become n-type. Our measurements show electron mobility reached values around ˜1,900 cm2/V.s at high electron concentration.

Keywords

deviceslithography (deposition)magnetoresistance (transport)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1259: Symposium S – Graphene Materials and Devices , 2010 , 1259-S14-12
Copyright
Copyright © Materials Research Society 2010

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