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Graphene Adsorbed on Corundum Surface: Clean Interface and Band Gap Opening

Published online by Cambridge University Press:  06 March 2012

Bing Huang ,
Qiang Xu  and
Su-Huai Wei
Bing Huang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, U.S.A.
Qiang Xu
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, U.S.A.
Su-Huai Wei
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, U.S.A.
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Abstract

Using advanced first-principles calculations, we have studied the structural and electronic properties of graphene/α-Al2O3 interfaces and show that α -Al2O3 is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of ~180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which is significantly larger than graphene on other popular substrates.

Keywords

nanostructureelectronic structuresimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1407: Symposium AA – Carbon Nanotubes, Graphene and Related Nanostructures , 2012 , mrsf11-1407-aa15-51
Copyright
Copyright © Materials Research Society 2012

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References

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