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Grain Growth in Dispersions of µc-Si IN a-Si:H

Published online by Cambridge University Press:  28 February 2011

M. Taguchi  and
S. Wagner
M. Taguchi
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, New Jersey 08544
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Abstract

We annealed dispersions of microcrystalline Si in amorphous silicon by heating to 550 °C. The dispersions had been deposited by plasma-enhanced CVD from SiF4 and H2 at 250 to 290 °C. By X-ray diffraction and Raman scattering we observe an increase in crystal size and volume fraction. The electron mobility, measured by the Van der Pauw method, also was raised to a highest value of 91 cm2V−1s−1 at the electron density of 7.6×1017 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 739
Copyright
Copyright © Materials Research Society 1995

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References

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