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Grain Growth in Al-(Cu, Pd, Nb) Thin Films

Published online by Cambridge University Press:  21 February 2011

J.D. Mis  and
K.P. Rodbell
J.D. Mis
Affiliation:
IBM Analytical Services Group, Hopewell Junction, NY 12533
K.P. Rodbell
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598
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Abstract

The microstructure of 1 μim thick Al films containing 0.5 and 2%Cu (weight percent), 0.3%Pd, and 0.3%Pd-0.3%Nb were investigated by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS) as a function of isochronal and isothermal anneals. The grain size, grain size distribution, and precipitate morphology of these films was measured from 200 to 500ºC, with the activation energy for grain growth (Ea) determined for I h anneals at 200, 300, 400 and 500ºC. Normal grain growth was recorded for the A1Cu films annealed at temperatures ≤400ºC; however secondary grain growth occurred in the AI-2Cu film annealed for I h at 500ºC, with grains as large as 16 μm in diameter observed. Grain growth in the AI-0.3Pd films resulted in strongly bi-modal grain size distributions, with the onset ofsignificant grain growth retarded for I h anneals at temperatures ≤300ºC.The addition of Nb to the AI-0.3Pd film resulted in monomodal grain size distributions over the entire temperature range. The role of crystallographic texture on grain growth in thin films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 395
Copyright
Copyright © Materials Research Society 1993

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