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Grain Boundary Shunt Currents Across a pn Junction

Published online by Cambridge University Press:  15 February 2011

S. Roy Morrison
S. Roy Morrison*
Affiliation:
Semiconductor Surface Group, SRI International, Menlo Park, California, USA
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Abstract

The effect on the diode characteristics when a conducting grain boundary intersects a pn junction is analyzed. The possibilities of conducting grain boundaries are related to the levels associated with precipitates at the grain boundary. The effect of the grain boundary on the diode characteristics is found particularly degrading when donor impurities precipitate in the n region while simultaneously acceptor impurities precipitate in the p region. Both solar cell characteristics and the dark diode characteristics are analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 193
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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see also Morrison, S. R. (Proc. 23rd Electronics Materials Conf., to appear in J. Electronic Materials).Google Scholar
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