Hostname: page-component-6bf8c574d5-nvqbz Total loading time: 0 Render date: 2025-03-08T04:11:27.347Z Has data issue: false hasContentIssue false
  • English
  • Français

Grain Boundary Migration and Grain Growth Induced by Electromigration in Copper and Aluminum Lines

Published online by Cambridge University Press:  15 February 2011

A. Gladkikh ,
E. Glickman ,
M. Karpovsky ,
Y. Lereah ,
A. Palevski  and
J. Shubert
A. Gladkikh
Affiliation:
Tel Aviv University, Department of Physical Electronics, Tel Aviv 69978, Israel
E. Glickman
Affiliation:
The Hebrew University, Graduate School of Applied Science, Jerusalem 91904, Israel
M. Karpovsky
Affiliation:
Tel Aviv University, School of Physics and Astronomy, Tel Aviv 69978,Israel
Y. Lereah
Affiliation:
Tel Aviv University, Department of Physical Electronics, Tel Aviv 69978, Israel
A. Palevski
Affiliation:
Tel Aviv University, School of Physics and Astronomy, Tel Aviv 69978,Israel
J. Shubert
Affiliation:
Intel Electronics Ltd., Jerusalem 91031, Israel
Get access

Abstract

The changes of microstructure in Al and Cu thin film lines due to electromigration have been studied using transmission electron microscopy. Grain boundary migration, inclination and dislocation activity were found to be critically involved in the electromigration induced hillock formation that can be described as three dimensional grain growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 283
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Park, C.W. and Vook, R.W., Appl. Phys. Lett 59, 175 (1991).Google Scholar
2 Hu, C.-K., Small, M.B. and Ho, P.S., Mater. Res. Soc. Symp. Proc. 265, 171 (1992).Google Scholar
3 King, A.H., Int. Mater. Rev. 32, 173 (1987).Google Scholar
4 Balluffi, R.W., Cahn, J.W., Acta Met. 29, 943 (1981).Google Scholar
5 Schumacher, S., Birringer, R., Straub, R. and Gleiter, H., Acta Met. 37, 2485 (1989).Google Scholar
6 Gust, W., Beues, I., Stefen, I., Stiltz, S. and Predel, B., Acta Met. 34, 1671 (1986)Google Scholar
7 Hirsh, P.B., Howie, A., Nicholson, R.B., Pashley, D.W. and Whelan, M.J., Electron microscopy of thin crystals (Butterworths, London, 1965).Google Scholar
8 Ross, C.A., Drewery, J.S., Somekh, R.E. and Evetts, J.E., J. Electron. Mater. 19, 911 (1990).Google Scholar
9 Pennebaker, W.B., J. Appl. Phys. 40, 391 (1969).Google Scholar
10 Gerth, D., Katzer, D., Krohn, M., Thin Solid Films 208, 67 (1992).Google Scholar