Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-02-04T17:47:44.823Z Has data issue: false hasContentIssue false
  • English
  • Français

Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

Published online by Cambridge University Press:  10 February 2011

T. D. Chen ,
J.-R. Lee ,
H. L. Tuller  and
Y.-M. Chiang
T. D. Chen
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
J.-R. Lee
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
H. L. Tuller
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Y.-M. Chiang
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Simplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 411: Symposium T – Electricaly-Based Microstructural Characterization , 1995 , 295
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Greuter, F., Solid State Ionics 75, p. 67–78 (1995).Google Scholar
2. Blatter, G. and Greuter, F., Phys. Rev. B 33, p. 3952–3966 (1986).Google Scholar
3. Tsuda, K. and Mukae, K., J. Ceram. Soc. Jpn. Inter. Ed. 97, p. 1206–1214 (1989).Google Scholar
4. Simpson, J.C. and Cordaro, J.F., J. Appl. Phys. 67, p. 6760–6763 (1990).Google Scholar
5. Lee, J.-R. and Chiang, Y.-M., Solid State Ionics 75, p. 79–88 (1995).Google Scholar
6. Lee, J.-R., PhD thesis, Massachusetts Institute of Technology, 1995.Google Scholar
7. Lee, J.-R. and Chiang, Y.-M., iib '95, Proceedings of the International Conference on Intergranular and Interphase Boundaries, Lisbon, Portugal, June 1995.Google Scholar
8. Lee, J.-R. and Chiang, Y.-M., unpublished work.Google Scholar