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Grain Boundaries of Controlled Geometry in ZnO Films Grown by Chemical Vapor Deposition: Undoped and Bi -Doped Boundaries

Published online by Cambridge University Press:  15 February 2011

I. Majid ,
Y. Liu ,
R. W. Balluffi  and
J. B. Vander Sande
I. Majid
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
Y. Liu
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
R. W. Balluffi
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
J. B. Vander Sande
Affiliation:
Department of Materials Science and Engineering, MIT, Cambridge Ma021 39
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Abstract

We describe a chemical vapour deposition technique for the controlled growth of ZnO films, containing grain boundaries which are suitable for detailed atomic resolution studies. Using this technique, we have grown; (1) random polycrystalline, (2) highly textured polycrystalline and (3) nominally single crystal films Also, a technique for doping the grain boundaries in these specimens with Bi by an “in-diffusion” method is demonstrated. The grain boundary atomic level structure and chemistry is studied by means of High Resolution Electron Microscopy (HREM) and STEM/EDX microanalysis. Some results obtained from boundaries in textured polycrystalline films which have the c-axes in neighboring grains lined-up to ˜1 ° are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 55
Copyright
Copyright © Materials Research Society 1996

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