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Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

Published online by Cambridge University Press:  09 August 2011

A. B. Pevtsov ,
N. A. Feoktistov  and
V. G. Golubev
A. B. Pevtsov
Affiliation:
A.F. loffe Physico-Technical Institute, 194021 St. Petersburg, Russia, [email protected]
N. A. Feoktistov
Affiliation:
A.F. loffe Physico-Technical Institute, 194021 St. Petersburg, Russia, [email protected]
V. G. Golubev
Affiliation:
A.F. loffe Physico-Technical Institute, 194021 St. Petersburg, Russia, [email protected]
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Abstract

Thin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 275
Copyright
Copyright © Materials Research Society 1999

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References

1. Amorphous Semiconductor Technologies and Devices, edited by Hamakawa, Y. ( Elsevier Science Publishers, New York, 1985), p.495 Google Scholar
2. Akiyama, K., Takimoto, A., Ogivara, A., Ogava, A., Jpn. Appl.Phys. 33, part 1, 590 (1993).Google Scholar
3. Hu, G. Y., O'Connel, R.F., He, Y. L., Yu, M. B., J.Appl.Phys. 78, 3945 (1995).Google Scholar
4. Liu, X., Tong, S., Wang, L., Rao, X., J. Appl.Phys. 78, 6143 (1995).Google Scholar
5. Pevtsov, A. B. Yu.Davydov, V., Feoktistov, N. A., Karpov, V. G., Phys.Rev. B52, 955 (1995).Google Scholar
6. Golubev, V. G., Yu.Davydov, V., Medvedev, A. V., Pevtsov, A. B., Feoktistov, N. A., Fiz.Tverd. Tela, 39, 1348 (1997) [Phys. Solid State 39, 1197 (1997)].Google Scholar
7. Tsu, R., Gonzales-Hemandes, J., Chao, S. S., Lee, S. C., Tanaka, K., Appl.Phys.Lett. 40, 534 (1982).Google Scholar
8. Shklovskii, B. I., phys.stat.sol.(b) 83, K11 (1977); A.L.Efros and B.I.Shklovskii. Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984), p. 420.Google Scholar
9. Tartakovskii, A. V., Fistul’, M. V., Raikh, M. E., Ruzin, I. M., Fiz. Tekh. Poluprovodmn. 21, 603 (1987) [Soy. Phys. Semicond. 21, 312 (1985)].Google Scholar
10. Cambell, I. H., Fauchet, P. M., Solid State Commun. 58, 739 (1986).Google Scholar