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GexSi1−x Heterojunction Internal Photoemission Structures by Ultra High Vacuum Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

R. Strong ,
D.W. Greve ,
T.E. Schlesinger ,
M.M. Weeks  and
P.W. Pellegrini
R. Strong
Affiliation:
ECE Dept., Carnegie Mellon University, Pittsburgh, PA 15213
D.W. Greve
Affiliation:
ECE Dept., Carnegie Mellon University, Pittsburgh, PA 15213
T.E. Schlesinger
Affiliation:
ECE Dept., Carnegie Mellon University, Pittsburgh, PA 15213
M.M. Weeks
Affiliation:
RL/ERED, 80 Scott Rd., Hanscom AFB, MA 1731-2909
P.W. Pellegrini
Affiliation:
RL/ERED, 80 Scott Rd., Hanscom AFB, MA 1731-2909
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Abstract

GexSi1−x, heterojunction internal photoemission devices for detection of infrared radiation have been fabricated from films grown by ultra high vacuum chemical vapor deposition (UHV/CVD). Films and devices were characterized by Fourier transform infrared spectroscopy (FTIR), photoresponse, and electrical measurements. Detector efficiencies were found to increase substantially (from ∼ 1.5 to ∼ 20% per eV) as the boron concentration in the absorbing layer was increased from 1×1020 to 2.5×1020 cm−3. Increases in boron concentration beyond 2.5×1020 cm−3 did not significantly improve device performance. This result is attributed to incomplete dopant activation at higher boron concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 339
Copyright
Copyright © Materials Research Society 1995

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References

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