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Germanium Photodetectors for Silicon Microphotonics by Direct Epitaxy on Silicon

Published online by Cambridge University Press:  10 February 2011

Hsin-Chiao Luan ,
Desmond R. Lim ,
Lorenzo Colace ,
Gianlorezo Masini ,
Gaetano Assanto ,
Kazumi Wada  and
Lionel C. Kimerling
Hsin-Chiao Luan
Affiliation:
Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
Desmond R. Lim
Affiliation:
Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
Lorenzo Colace
Affiliation:
Department of Electronic Engineering & National Institute for the Physics of Matter, Terza University of Rome, Via della Vasca Navale 84, 00146 Roma, Italy
Gianlorezo Masini
Affiliation:
Department of Electronic Engineering & National Institute for the Physics of Matter, Terza University of Rome, Via della Vasca Navale 84, 00146 Roma, Italy
Gaetano Assanto
Affiliation:
Department of Electronic Engineering & National Institute for the Physics of Matter, Terza University of Rome, Via della Vasca Navale 84, 00146 Roma, Italy
Kazumi Wada
Affiliation:
Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
Lionel C. Kimerling
Affiliation:
Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
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Abstract

We have grown high-quality Ge epilayers on Si using two-step ultrahigh vacuum/chemical-vapor-deposition followed by post-growth cyclic thermal annealing. Cyclic annealing was effective in reducing threading dislocation densities. The annealing process was improved by optimizing the dislocation velocity. We fabricated and tested metal-semiconductor-metal planar photodetectors using Ge epilayers grown on Si. Our measurement showed an improvement in the photodetector performance as a result of the improved materials quality. The process described in this paper for making high-quality Ge on Si is uncomplicated and can be easily integrated with Si CMOS processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 279
Copyright
Copyright © Materials Research Society 2000

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References

1 Agarwal, A. M., Liao, L., Foresi, J. S., Black, M. R., Duan, X., and Kimerling, L. C., J. Appl. Phys. 80, 6120–6123 (1996).Google Scholar
2 Foresi, J. S., Black, M. R., Agarwal, A. M., and Kimerling, L. C., Appl. Phys. Lett. 68, 2052–2054 (1996).Google Scholar
3 Giovane, L. M., Lim, D. R., Ahn, S. H., Chen, T. D., Foresi, J. S., Liao, L., Oulette, E. J., Agarwal, A. M., Duan, X., Michel, J., Thilderkvist, A., and Kimerling, L. C., Mat. Res. Soc. Symp. Proc. 486, 45–56 (1998).Google Scholar
4 Colace, L., Masini, G., Galluzi, F., Assanto, G., Capellini, G., DiGaspare, L., and Evangelisti, F., Solid State Phenomena 54, 55–58 (1997).Google Scholar
5 Sakai, A. and Tatsumi, T., Appl. Phys Lett. 64, 52–54 (1994).Google Scholar
6 Sakai, A., Tatsumi, T., and Aoyama, K., Appl. Phys. Lett. 71, 3510–3512 (1997).Google Scholar
7 Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., DiGaspare, L., Palange, E., and Evangelisti, F., Appl. Phys. Lett. 72, 3175–3177 (1998).Google Scholar
8 Colace, L., Masini, G., Galluzi, F., Assanto, G., Capellini, G., DiGaspare, L., Palange, E., and Evangelisti, F., J. Vac. Sci. Technol. B 17, 465–467 (1999).Google Scholar
9 Luan, H.-C., Lim, D. R., Lee, K. K., Chen, K. M., Sandland, J. G., Wada, K., and Kimerling, L. C., Appl. Phys. Lett. 75, 2909 (1999).Google Scholar
10 Masini, G., Colace, L., Assanto, G., Luan, H.-C., Wada, K., and Kimerling, L. C., Electronics Letters 35, 1467 (1999).Google Scholar
11 Colace, L., Masini, G., Assanto, G., Luan, H.-C., Wada, K., and Kimerling, L. C., (submitted to Applied Physics Letters).Google Scholar
12 Yamaguchi, M., Yamamoto, A., Tachikawa, M., Itoh, Y., and Sugo, M., Appl. Phys. Lett. 53, 2293–2295 (1988).Google Scholar
13 Romanov, A. E., Pompe, W., Beltz, G. E., and Speck, J. S., Appl. Phys. Lett. 69, 3342–3344 (1996).Google Scholar
14 Hull, R., Bean, J. C., Bahnck, D., Peticolas, J. L. J., Short, K. T., and Unterwald, F. C., J. Appl. Phys. 70, 2052 (1991).Google Scholar
15 Properties of strained and relaxed Silicon Germanium; Vol. 12, edited by Kasper, E. (INSPEC, The Institution of Electrical Engineers, Lodon, 1995).Google Scholar