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Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

Published online by Cambridge University Press:  22 February 2011

J. Wagner ,
G. Contreras ,
A. Compaan ,
M. Cardona  and
A. Axmann
J. Wagner
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D - 7000 Stuttgart 80, Federal Republic of Germany
G. Contreras*
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D - 7000 Stuttgart 80, Federal Republic of Germany
A. Compaan*
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D - 7000 Stuttgart 80, Federal Republic of Germany
M. Cardona
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D - 7000 Stuttgart 80, Federal Republic of Germany
A. Axmann
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckertstr. 4, D - 7800 Freiburg, Federal Republic of Germany
*
+ DAAD Fellow, on leave from E.S.F.M.-I.P.N. México
++ Von Humboldt Foundation Fellow, on leave from Kansas State University, Dept. of Physics, Cardwell Hall, Manhattan, Kansas 66506, U. S. A.
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Abstract

It has been shown previously that dopant concentrations far above the equilibrium solubility limit can be obtained in semiconductors by pulsed laser annealing of heavily ion implanted material. We exploit this fact to study the photoluminescence of germanium with dopant concentrations up to 1021 cm−3. From this study we obtain information on the filling of higher lying band minima and the shift of the optical band gap as a function of carrier concentration over a much wider range than accessible with bulk doped material. In addition it is shown that photoluminescence provides a diagnostic tool to characterize implanted layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 147
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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