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Ge Related Defect-Complex Induced Luminescence in InGaAsP

Published online by Cambridge University Press:  26 February 2011

B. M. Arora ,
S. Chakravarty ,
S. S. Chandvankar ,
R. Rajalakshmi  and
A. K. Srivastava
B. M. Arora
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
S. Chakravarty
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
S. S. Chandvankar
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
R. Rajalakshmi
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
A. K. Srivastava
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
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Abstract

Germanium doping of InGaAsP epitaxial layers grown by liquid phase epitaxy produces n type conduction with a net distribution coefficient KGe∼ 5×10-3. In addition, Ge doping introduces a broad band (∼0.2eV) of efficient luminescence which is red shifted with respect to the band edge. The intensity of this band grows with increasing Ge concentration. In all the samples, the integrated intensity of the broad band varies relatively less in the temperature range 15K to about 90K. At higher temperatures, the intensity falls exponentially with an activation energy of 0.05 - 0.07 eV. The emission spectra are compared with the configuration-coordinate model of the emission from a Ge related complex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 505
Copyright
Copyright © Materials Research Society 1988

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References

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