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Ge Diffusion in SnTe Crystal

Published online by Cambridge University Press:  10 February 2011

O.E. Kaportseva ,
L.V. Yashina ,
V.B. Bobruiko ,
D.V. Safonov ,
V.F. Kozlovsky ,
V.I. Shtanov  and
T.B. Shatalova
O.E. Kaportseva
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail:[email protected]
L.V. Yashina
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail:[email protected]
V.B. Bobruiko
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail:[email protected]
D.V. Safonov
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail:[email protected]
V.F. Kozlovsky
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail:[email protected]
V.I. Shtanov
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail:[email protected]
T.B. Shatalova
Affiliation:
Chemistry Department, Moscow State University, Leninskie Gory, Moscow, 119899, Russia, e-mail:[email protected]
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Abstract

This work is devoted to the study of Ge diffusion in crystalline Sn1-δTe1+8 with δ=0.0065±0.0008 in temperature range T=878-973 K by electron probe microanalysis and layer by layer X-ray analysis. For the latter lattice constant dependence on composition was determined: a(Å)=a(SnTe)-(0.368±0.008)× where 0<×<0. 1. Activation energy was found to be about 1.3 eV, much less than in the case of Ge diffusion in PbTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 429
Copyright
Copyright © Materials Research Society 1998

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References

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