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GaSb-based Nanocomposites as IR-Emitters

Published online by Cambridge University Press:  11 February 2011

Ludmila Bakueva ,
Sergei Musikhin ,
Edward H. Sargent  and
Stephan Schulz
Ludmila Bakueva
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto M5S 3E4, Canada
Sergei Musikhin
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto M5S 3E4, Canada
Edward H. Sargent
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto M5S 3E4, Canada
Stephan Schulz
Affiliation:
Institut für Anorganische Chemie der Universität Bonn, D-53121, Bonn, Germany
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Abstract

Nanocomposites consisting of GaSb nanocrystals in a conducting polymer matrix were fabricated and investigated. The current-voltage characteristics of the nanocomposite-based diode structures have a symmetric but strongly nonlinear character. Capacitance-voltage characteristics of the structures were investigated both in the dark and under illumination and compared with those of a pure polymer. At applied voltages exceeding 7–10 V (for different samples) electroluminescence begins and steeply increases. The position of the maximum of the measured electroluminescence spectra can be made to vary in the 1.3 – 1.6 μm wavelengths region by changing nanocrystal size. Photoluminescence spectra have a maximum nearly coinciding with that of electroluminescence but of considerably larger width. The results demonstrate the promise of GaSb-based nanocomposites for infrared light-emitting devices operating in the 1.3–1.6 μm spectral region used in optical communication systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E13.34
Copyright
Copyright © Materials Research Society 2003

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References

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