Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T17:32:27.793Z Has data issue: false hasContentIssue false
  • English
  • Français

GaSb on Si: Structural Defects and Their Effect on Surface Morphology and Electrical Properties

Published online by Cambridge University Press:  17 February 2014

Shailesh Kumar Madisetti ,
Vadim Tokranov ,
Andrew Greene ,
Steven Novak ,
Michael Yakimov ,
Serge Oktyabrsky ,
Steven Bentley  and
Ajey P. Jacob
Shailesh Kumar Madisetti
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Vadim Tokranov
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Andrew Greene
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Steven Novak
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Michael Yakimov
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Serge Oktyabrsky
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Steven Bentley
Affiliation:
GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, U.S.A.
Ajey P. Jacob
Affiliation:
GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, U.S.A.
Get access

Abstract

The paper reports on the growth of group III-Sb’s on silicon, substrate preparation, optimization of AlGaSb metamorphic buffer, formation of defects (threading dislocations, microtwins and anti-phase boundaries) and their effect on the surface morphology and electrical properties of these high hole mobility materials for future III-V CMOS technology. Defect density was found to be 2-3x higher than in similar structures grown on GaAs, resulting in 2x higher roughness. Defects also result in background p-type doping well above 1017 cm-3 causing inversion of polarity from n-type to p-type in thin n-type doped GaSb. MOS Capacitors fabricated on these buffers demonstrate similar characteristics to higher quality GaSb-on-GaAs. The highest hole mobility obtained in a strained InGaSb QW MOS channel grown on silicon is ∼630 cm2/V-s which is ∼30% lower than similar channels grown on GaAs substrates.

Keywords

III-Vmolecular beam epitaxy (MBE)Si
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 115 - 120
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Greene, A., et al. ., Solid. State. Electron., 78, 56, (2012).CrossRefGoogle Scholar
Nainani, A., et al. ., IEEE Trans. Electron Devices, 58, 3407 (2011).CrossRefGoogle Scholar
Tokranov, V. et al. ., J. Cryst. Growth, 378, 631 (2013).CrossRefGoogle Scholar
Bennett, B. R. et al. ., Appl. Phys. Lett., 91, 042104 (2007).CrossRefGoogle Scholar
Madisetti, S. et al. ., Phys. Status Solidi - RRL, 7, 550 (2013).CrossRefGoogle Scholar
Zhao, H. et al. ., Appl. Phys. Lett., 96, 102101 (2010).CrossRefGoogle Scholar
Wang, W. et al. ., IEEE Trans. Electron Dev., 58, 1972 (2011).CrossRefGoogle Scholar
Radosavljevic, M. et al. ., IEEE Electron Devices Meeting, p. 1 (2008).Google Scholar
Nainani, A. et al. ., J. Appl. Phys., 110, 014503 (2011).CrossRefGoogle Scholar
Akahane, K. et al. ., J. Cryst. Growth, 264, 21 (2004).CrossRefGoogle Scholar
Akahane, K. et al. ., J. Cryst. Growth, 283, 297 (2005).CrossRefGoogle Scholar
Kwang, M. K., et al. ., Nanotechnology, 20, 225201 (2009).Google Scholar
Toyota, H. et al. ., Phys. Procedia, 3, 1345 (2010).CrossRefGoogle Scholar
Cerutti, L. et al. ., IEEE Photon. Technol. Lett., 22, 553 (2010).CrossRefGoogle Scholar
Koveshnikov, S. et al. ., Appl. Phys. Lett., 88, 022106 (2006).CrossRefGoogle Scholar