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Gas sensors based on semiconductor oxides: basic aspects onto materials and working principles

Published online by Cambridge University Press:  01 February 2011

M. Cristina ,
Alessio Giberti ,
Vincenzo Guidi ,
Cesare Malagù ,
Beatrice Vendemiati  and
Giuliano Martinelli
Alessio Giberti
Affiliation:
INFM- Dipartimento di Fisica, Università di Ferrara, Via del Paradiso 12, 44100 Ferrara, Italy
Vincenzo Guidi
Affiliation:
INFM- Dipartimento di Fisica, Università di Ferrara, Via del Paradiso 12, 44100 Ferrara, Italy
Cesare Malagù
Affiliation:
INFM- Dipartimento di Fisica, Università di Ferrara, Via del Paradiso 12, 44100 Ferrara, Italy
Beatrice Vendemiati
Affiliation:
INFM- Dipartimento di Fisica, Università di Ferrara, Via del Paradiso 12, 44100 Ferrara, Italy
Giuliano Martinelli
Affiliation:
INFM- Dipartimento di Fisica, Università di Ferrara, Via del Paradiso 12, 44100 Ferrara, Italy
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Abstract

The properties of the most important semiconductor oxides for gas sensing, such as SnO2, TiO2, WO3 and their modifications due to ion-addition or to catalyzers, have been reviewed. The oxide powders, synthesized via wet chemical routes, have been characterized both as dispersed powders and as sintered films. Deposition of thick film gas sensors was carried out through screen-printing technology. They have been studied comparing the electrical behavior under identical environmental conditions. Potential barrier heights have been measured via stimulated temperature measurements and density of ionized donors obtained via Hall Effect. A theoretical model has been developed to justify the size dependent behavior of nanocrystalline oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A4.6
Copyright
Copyright © Materials Research Society 2005

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