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GaN Film Growth by a Supersonic Arcjet Plasma

Published online by Cambridge University Press:  15 February 2011

M. A. Cappelli ,
A. E. Kull ,
K. Schwendner ,
H. Lee ,
S. J. Harris Jr  and
J. Mroczkowski
M. A. Cappelli
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, CA. 94305-3032
A. E. Kull
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, CA. 94305-3032
K. Schwendner
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, CA. 94305-3032
H. Lee
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA.
S. J. Harris Jr
Affiliation:
Solid State Electronics Laboratory, Stanford University, Stanford, CA.
J. Mroczkowski
Affiliation:
Loral Infrared & Imaging Systems, Lexington, MA.
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Abstract

This paper reports on preliminary studies of GaN growth obtained using a supersonic nitrogen arcjet plasma expanding into low pressure. A hydrogen-free and carbon-free growth environment was achieved by use of a Ga vapor source positioned downstream of the expanding plume. GaN growth rates of around 8 μm/hour were obtained in these preliminary studies. We believe these growth rates are the highest reported for a non-chemical decomposition process. The growth rates are attributed to the very high nitrogen atom fluxes estimated to be on the order of 1019 atoms/cm2/sec. The initial growth rates are believed to be well below those possible with a fully optimized system. The GaN films are characterized by Raman spectroscopy, visible-IR transmission, and x-ray diffraction. The deposited films appear to be single crystal and epitaxial on basal plane sapphire substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 359
Copyright
Copyright © Materials Research Society 1996

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