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Furnace Annealed Thin Films of Plasma Enhanced Chemical Vapor Deposited Titanium Borides on Silicon

Published online by Cambridge University Press:  28 February 2011

L. M. Williams
L. M. Williams*
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

Thin films of titanium borides, deposited onto silicon substrates at 600 °C using plasma enhanced chemical vapor deposition, were annealed in a furnace at temperatures from 700 °(C to 990 °C. Structural properties and electronic properties were measured for the annealed films and the asdeposited films for comparison. Sheet resistances for the films show about a 35% decrease after anneals at 990 °(C. The reduction in sheet resistance appears to be relatively insensitive to the length of the anneal time. X-ray diffraction spectra of the as-deposited films show no peaks that are attributable to crystalline titanium borides; however, there are diffraction peaks that are believed to be caused by products from reactions between the titanium borides and the silicon substrate during deposition. There is evidence that crystalline titanium diboride may start to form during the anneal at 990 °C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 339
Copyright
Copyright © Materials Research Society 1986

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