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The Function of Buffer Layers and Defects in Heteroepitaxial BaxSr1-xTiO3/YBa2Cu3O7-x/CeO2/Y-ZrO2/Si/Al2O3 Multilayers

Published online by Cambridge University Press:  15 February 2011

E. Olsson ,
Yu. Boikov ,
Z. G. Ivanov ,
A. L. Vasiliev  and
T. Claeson
E. Olsson
Affiliation:
Department of Physics, Chalmers University of Technology/Göteborg University, S-412 96 GÖTEBORG, Sweden
Yu. Boikov
Affiliation:
Department of Physics, Chalmers University of Technology/Göteborg University, S-412 96 GÖTEBORG, Sweden
Z. G. Ivanov
Affiliation:
Department of Physics, Chalmers University of Technology/Göteborg University, S-412 96 GÖTEBORG, Sweden
A. L. Vasiliev
Affiliation:
Department of Physics, Chalmers University of Technology/Göteborg University, S-412 96 GÖTEBORG, Sweden
T. Claeson
Affiliation:
Department of Physics, Chalmers University of Technology/Göteborg University, S-412 96 GÖTEBORG, Sweden
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Abstract

Different aspects of interfacial interactions during the growth of epitaxial oxides are illustrated in a BaxSr1-xTiO3/YBa2Cu3O7-x/CeO2/Y-ZrO2/Si/Al2O3 heteroepitaxial multilayer. The effect of chemical interaction, interdiffusion, epitaxial strain and thermal strain are exemplified. It is shown how buffer layers can be used to compensate for otherwise detrimental interactions. Considerations necessary for annealing following the film depositions are also addressed. Even if the described structures are specific for this system, similar considerations need to be made for other oxide systems as well. The present description can provide help to identify suitable material combinations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 321
Copyright
Copyright © Materials Research Society 1996

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