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Forms of Hydrogen and Hydrogen Diffusion in Realistic Models of a-Si:H

Published online by Cambridge University Press:  17 March 2011

P. A. Fedders
P. A. Fedders*
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130, U.S.A
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Abstract

Using ab initio density functional calculations we investigate the energetics of hydrogen in a-Si:H starting from a basic supercell that contains 142 atoms and is completely free of defects. The study includes isolated H atoms bonded to dangling bonds, H atoms bonded to dangling bonds in regions of clustered H, bond centered hydrogen, and molecular hydrogen. In particular, the difference between clustered and isolated hydrogen has been largely ignored in the past. Energetics of doped as well as undoped cells are considered. The results are discussed with particular emphasis on H diffusion and the replacement of atoms in molecular hydrogen with those bonded.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A13.2
Copyright
Copyright © Materials Research Society 2001

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