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Formation of Si-On-Insulator Structure Under Solid Phase Growth

Published online by Cambridge University Press:  25 February 2011

M. Miyao ,
M. Moniwa ,
T. Warabisako ,
H. Sunami  and
T. Tokuyama
M. Miyao
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Moniwa
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Warabisako
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
H. Sunami
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Tokuyama
Affiliation:
Central Research Lab., Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Two possible solutions to the problem of nucleus growth encountered in lateral solid-phase epitaxial growth over insulating films are discussed. A stress field originating from the thermal expansion coefficient for Si and SiO2 acts as the driving force behind preferential nucleation. Utilization of underlying Si3N4 films successfully eliminated nucleii growth at topographically irregular portions. In addition, single crystallization of poly-Si nucleii was achieved on SOI structures for the first time. Lateral growth speed (v [cm/s]) of 1.6 × 10 exp(−3.9/kT[eV]) was obtained during high-temperature annealing (≥1000 C ).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 705
Copyright
Copyright © Materials Research Society 1985

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References

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