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Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

Published online by Cambridge University Press:  15 February 2011

S.W. Chiang ,
Y.S. Liu  and
R.F. Reihl
S.W. Chiang
Affiliation:
General Electric Corporate Research and Development Schenectady, New York, 12301, USA
Y.S. Liu
Affiliation:
General Electric Corporate Research and Development Schenectady, New York, 12301, USA
R.F. Reihl
Affiliation:
General Electric Corporate Research and Development Schenectady, New York, 12301, USA
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Abstract

High-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 407
Copyright
Copyright © Materials Research Society 1981

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References

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