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Formation of Quantum Wires by Strain-Induced Lateral-Layer Ordering Process: Growth Mechanism and Device Applications

Published online by Cambridge University Press:  10 February 2011

K. Y. Cheng  and
K. C. Hsieh
K. Y. Cheng
Affiliation:
Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
K. C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

GaxIn1−xAs and GaxIn1−xP quantum wire (QWR) arrays were grown by a single-step molecular beam epitaxy. Lateral Ga(In composition modulation perpendicular to the growth direction occurs spontaneously during the growth of (GaAs)m/(InAs)n or (GaP)m/(InP)n shortperiod superlattices on InP or GaAs substrates, respectively, by the strain-induced lateral-layer ordering (SILO) process, producing lateral quantum wells. This straightforward method employs standard on-axis (001)-oriented substrates, and requires no pre-growth substrate patterning, nor does it involve post-growth processing for the formation of QWRs. Both GaxIn1−xAs infrared (1.7 μm) lasers and GaxIn1−xP visible (0.7 μm) lasers with QWR active regions have been successfully fabricated. These lasers showed many unique features that have never been observed in quantum well lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 241
Copyright
Copyright © Materials Research Society 1996

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