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Formation of p-n Junctions by Laser Processing Sb-Pt Thin Films on Si

Published online by Cambridge University Press:  15 February 2011

R. J. Schutz ,
G. K. Celler  and
C. C. Chang
R. J. Schutz
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
G. K. Celler
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
C. C. Chang
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
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Abstract

Planar p-n junctions with Pt silicide contacts have been formed by laser irradiating p-type Si/120Å Sb/400Å Pt composite thin film structures. The samples were prepared in a standard e-beam evaporation system. They were never ion implanted. Laser processing was performed with either a scanning cw Ar laser or a Q-switched Nd:YAG (λ = 0.53 μm) laser which provided 100 nsec long pulses. After the irradiations were performed, a p-type Si/n+Si/Pt-Si structure was present. The n+ region resulted from Sb incorporated in the Si lattice. When the same initial composite was furnace annealed, the Sb diffused to the surface and sublimated, leaving a p-type Si/PtSi near-ohmic contact. Depth profiles of the samples were determined with Auger electron spectroscopy. The structure of the Pt-Si layer was studied using wide film Debye X-ray diffraction. The electrical properties of the junctions were examined by measuring their I-V and C-V characteristics and minority carrier lifetimes. Differences in the structural and electrical properties that resulted from the two types of laser irradiation will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 645
Copyright
Copyright © Materials Research Society 1982

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References

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