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Formation of Planar and Strip Waveguides in KNbO3 by He Ion Implantation

Published online by Cambridge University Press:  15 February 2011

D. Fluck ,
M. Fleuster ,
R. Irmscher ,
P. Günter  and
C H. Buchal
D. Fluck
Affiliation:
Inst. Quantum Electronic, Swiss Fed. Inst. of Technology, CH-8093 Zürich, Switzerland
M. Fleuster
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-KFA), Forschungszentrum, D-5170 Jülich, W. Germany
R. Irmscher
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-KFA), Forschungszentrum, D-5170 Jülich, W. Germany
P. Günter
Affiliation:
Inst. Quantum Electronic, Swiss Fed. Inst. of Technology, CH-8093 Zürich, Switzerland
C H. Buchal
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-KFA), Forschungszentrum, D-5170 Jülich, W. Germany
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Abstract

Single crystals of KNbO3 have an excellent potential for integrated and nonlinear optical applications. MeV He ion implantation is a reliable technique for the formation of permanent optical waveguides in this material. We have fabricated planar and strip waveguides using He energies between 1 and 3.5 MeV and ion doses of 5 × 1013 to 1016 ions/cm2. Waveguides were analyzed at a wavelength of 514, 633 and 860 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 244: Symposium J – Optical Waveguide Materials , 1991 , 331
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1]. Günter, P., Optics Commun. 11, 285 (1974).10.1016/0030-4018(74)90183-7CrossRefGoogle Scholar
[2]. Günter, P., Phys. Reports 93, 199 (1982).10.1016/0370-1573(82)90007-2Google Scholar
[3]. Baumert, J.C., Günter, P., and Melchior, H., Opt. Commun. 48, 215 (1983).10.1016/0030-4018(83)90089-5Google Scholar
[4]. Günter, P., Asbeck, P.M., and Kurtz, S.K., Appl. Phys. Lett. 35, 461 (1979).10.1063/1.91169Google Scholar
[5]. Bremer, T., Heiland, W., Hellermann, B., Hertel, P., Krätzig, E., and Kollewe, D., Ferroelectr. Lett. 9, 11 (1988).Google Scholar
[6]. Zhang, L., Chandler, P.J., and Townsend, P.D., Ferroelectr. Lett. 11, 89 (1990).10.1080/07315179008200806Google Scholar
[7]. Strohkendl, F.P., Günter, P., Buchal, Ch., and Irmscher, R., J. Appl. Phys. 69, 84 (1991).Google Scholar
[8]. Strohkendl, F.P., Fluck, D., Günter, P., Irmscher, R., and Buchal, Ch., Appl. Phys. Lett., 59, 26 (1991) p**10.1063/1.105724Google Scholar
[9]. Biersack, J., and Haggmark, L., Nucl. Instr. Meth. 174, 257 (1980)10.1016/0029-554X(80)90440-1Google Scholar
[10]. Chandler, P.J., and Lama, F.L., Opt. Acta 33, 127 (1986)10.1080/713821921Google Scholar
[11]. Reed, G.T., and Weiss, L.B., Electronics Lett. 23, 792 (1987).Google Scholar
[12]. Irmscher, R., Fluck, D., Buchal, Ch., Stritzker, B., and Günter, P., Mat. Res. Soc. Symp. Proc. 201, 399 (1991).Google Scholar
[13]. Fluck, D., Irmscher, R., Buchal, Ch., and Günter, P., Appl. Phys. Lett. 59, 25 (1991) p**Google Scholar