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Formation of Mn-As Centers in In1-xMnxAs Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  15 February 2011

A. Krol ,
Y. L. Soo ,
Z. H. Ming ,
Y. H. Kao ,
H. Munekata  and
L. L. Chang
A. Krol
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
Y. L. Soo
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
Z. H. Ming
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
Y. H. Kao
Affiliation:
Department of Physics, State University of New York at Buffalo, New York 14260
H. Munekata
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598.
L. L. Chang
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598.
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Abstract

XAFS spectra at the Mn K-edge were obtained for films of In1-xMnxAs (0.0014 ≤x ≤ 0.12) grown by MBE method at two different substrate temperatures Ts, = 200–210 °C and Ts, = 280–300 ° C. It has been found that Mn-As complexes which consist of a central Mn atom surrounded by six neighboring As most likely arranged in the form of a distorted trigonal antiprism with one or two additional Mn atoms placed on the long axis of the antiprism, can substitute for the In-As tetrahedron in the undistorted zincblende structure. For a composition of x = 0.12 we have found the formation of MnAs clusters with NiAs-like structure in the high-growth-temperature samples. We thus conclude that the magnetic properties of the In1-xMnx As semiconductors are mainly determined by the formation and local structure ol'the Mn-As complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 290: Symposium N – Dynamics in Small Confining Systems , 1992 , 245
Copyright
Copyright © Materials Research Society 1993

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References

1. Munekata, H. et al., Phys. Rev. Lett. 63, 1849 (1989).Google Scholar
2. Munekata, H et al. J. Vac. Sci. Technol. B 8, 176 (1990).Google Scholar
3. Ohno, H. et al., J. Appl. Phys. 69, 6103 (1991).Google Scholar
4. Munekata, H., Ohno, H., Ruf, R. R., Gambino, R. J., and Chang, L. L., J. Cryst. Growth (1991) 11, 1011 (1991).Google Scholar
5. Molnar, S. von et al., J. Magnetism Magn. Materials 93, 356 (1991).Google Scholar
6. Krol, A. et al. preprint.Google Scholar
7. Stern, E. A. in X-ray Absorption edited by Koningsberger, D. C. and Prins, R. (Wiley, New York, 1988), p. 3.Google Scholar
8. McKale, A. G., Veal, B. W., Paulikas, A. P., Chan, S.-K., and Knapp, G. S., J. Am. Chem. Soc. 110, 3763 (1988).Google Scholar
9. Lee, P. A., Citrin, F. H., Eisenberger, P., and Kincaid, B. M., Rev. Mod. Phys. 53, 769 (1981). T. M. Hayes and J. B. Boyce, in Solid State Physics, edited by H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New York, 1982), Vol. 37, p. 173. E. A. Stern and S. M. Heald, in Handbook on Synchrotron Radiation, edited by E. E. Koch (North- Holland, New York, 1983), Vol.1, p. 955. D. E. Sayers, B. A. Bunker, in X-ray Absorption, edited by D. C. Koningsberger and R. Prins (Wiley, New York, 1988), p. 211.Google Scholar
10. Crozier, E. D., Rehr, J. J. and Ingalls, R., in X-ray Absorption, edited by Koningsberger, D. C. and Prins, R. (Wiley, New York, 1988), p. 373.Google Scholar
11. Batien, F. and Weber, J., Phys. Rev. B 37, 10 111 (1988)Google Scholar