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Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

Published online by Cambridge University Press:  03 September 2012

Akira Izumi ,
Noriyuki Matsubara ,
Yusuke Kushida ,
Kazuo Tsutsui  and
Nikolai S. Sokolov
Akira Izumi
Affiliation:
School of Materials Science, JAIST (Japan Advanced Institute of Science and Technology) 1-1 Asahidai Tatsunokuchi, Ishikawa 923-12, Japan
Noriyuki Matsubara
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 4259 Nagatsuta Midori-ku, Yokohama 226, Japan
Yusuke Kushida
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 4259 Nagatsuta Midori-ku, Yokohama 226, Japan
Kazuo Tsutsui
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 4259 Nagatsuta Midori-ku, Yokohama 226, Japan
Nikolai S. Sokolov
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Sciences St. Petersburg 194021, Russia
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Abstract

We proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 171
Copyright
Copyright © Materials Research Society 1997

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References

1 Seabaug, A. C., Cho, C. -C., Steinhoff, R. M., Moise, T. S., Tang, S., Wallance, R. M., Beam, E. A., and Kao, Y. -C., Proc. 2nd Int. Workshop on Quantum Functional Devices (1995, Matsue, Japan) 32.Google Scholar
2 Kazarinov, R. F., Suris, R. A., Fiz. Tekh. Poluprov. 5, 797 (1971) Sov. Phys. Semicond. 5, 707Google Scholar