Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-02T23:43:35.766Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation Of Er-Related Donor Centers During Postimplantation Annealing Of Si:Er

Published online by Cambridge University Press:  15 February 2011

N.A. Sobolev ,
O.V. Aleksandrov  and
E.I. Shek
N.A. Sobolev
Affiliation:
Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, [email protected]
O.V. Aleksandrov
Affiliation:
Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, [email protected]
E.I. Shek
Affiliation:
Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, [email protected]
Get access

Abstract

Dependence of the donor center concentration, the Er activation coefficient and the nlayer thickness on the implantation and subsequent annealing conditions was studied. A model of formation of donor centers has been developed. The model is based on the interaction of Er atoms with self-interstitials. It describes the dependence of electrical parameters of Er-doped layers on temperature and time of postimplantation annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 237
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Widdershoven, F. and Naus, J.P.M., Mater. Sci. Eng. B 4, p. 71 (1989).Google Scholar
2. Benton, J.L., Michel, J., Kimerling, L.C., Jacobson, D.C., Xie, Y.H., Eaglesham, D.J.,Fitzgerald, E.A. and Poate, J.M.,J. Appl. Phys. 70, p. 2667 (1991).Google Scholar
3. Priolo, F., Coffa, S., Franzo, G., Spinella, C.,Carnera, A. and Bellani, V.,J. Appl. Phys. 74, p. 4936(1993).Google Scholar
4. Aleksandrov, O.V., Sobolev, N.A.,Shek, E.I. and Merkulov, A.V., Fiz. Tekh. Poluprovodn. 30, p. 876 (1996) [Semiconductors 30, p. 468 (1996)].Google Scholar
5. Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.S., Eaglesham, D.S., Fitzgerald, E.A.,Xie, Y.H., Poate, J.M. and Kimerling, L.C.,J. Appl. Phys. 70, p. 2672 (1991).Google Scholar
6. Sobolev, N.A., Bresler, M.S., Gusev, O.B., Shek, E.I.,Makoviichuk, M.I. and Parshin, E.O., Fiz. Tekh. Poluprovodn. 28, p. 1995 (1994) [Semiconductors 28, p. 1100 (1994)].Google Scholar
7. Emtsev, V.V., Aleksandrov, O.V., Poloskin, D.S.,Shek, E.I. and Sobolev, N.A., Materials Science Forum, Trans Tech publications, Switzerland, 196–201, p. 615 (1995).Google Scholar