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Formation of dense and aligned planar arrangements of Pb nanoparticles at silica/silicon interfaces

Published online by Cambridge University Press:  22 March 2011

Flavia P. Luce
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil
Felipe Kremer
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil
Dario F. Sanchez
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil
Zacarias E. Fabrim
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil Escola de Engenharia, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil
Shay Reboh
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil Escola de Engenharia, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil
Fernando C. Zawislak
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil
Paulo F. P. Fichtner
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil Escola de Engenharia, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Brazil
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Abstract

The ion beam synthesis of Pb nanoparticles (NPs) in silica/silicon films is studied in terms of the combination of a two-step annealing process consisting of a low temperature long time aging treatment followed by a high temperature short time furnace annealing. The samples are analyzed through Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. The aging process leads to the suppression of the classical homogeneous nucleation of metallic Pb NPs in the silica, thus promoting Pb redistribution during the high temperature annealing. This causes the formation of dense bi-dimensional NP arrays located at the silica-silicon interface, presenting small size dispersion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. De Marchi, G., , Mattei, G., Mazzoldi, P., sada, C. and Miotello, A.. J. Apll. Phys. 92, 4249 (2002).Google Scholar
2. Heinig, K. H., Müller, T., Schmidt, B., Strobel, M. and Möller, W.. Apll. Phys. A 77, 17 (2003).Google Scholar
3. Bernas, H.. Materials Science With Ion Beam, Topics in Applied Physics 116, Springer (2009).Google Scholar
4. Ren, F., Xiao, X. H., Cai, G. X., Wang, J. B. and Jiang, C. Z.. Appl. Phys. A 96, 317 (2009).Google Scholar
5. Kremer, F., Lopes, J. M. J., Zawislak, F. C. and Fichtner, P. F. P.. Appl. Phys. Letters 91, 083102 (2007).Google Scholar
6. Luce, F. P., Kremer, F., Reboh, S., Fabrim, Z. E., Sanchez, D. F., Zawislak, F. C. and Fichtner, P. F. P.. J. Appl. Phys. 109, 014320 (2011).Google Scholar
7. Patnaik, P.. Handbook of Inorganic Chemicals. McGraw-Hill (2002).Google Scholar
8. Rajesh, C., Majumder, C., Rajan, M. G. R. and Kulshreshtha, S. K.. Phys. Rev. B 72, 235411 (2005).Google Scholar
9. Shvatsburg, A. and Jarrold, M. F.. Chem. Phys Letters 317, 615 (2000).Google Scholar
10. Pushpa, R., Waghmare, U. and Narasimhan, S.. Phys. Rev. B 77, 045427 (2008).Google Scholar