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Formation of AlxGa1-xAs Alloy on the Semi-Insulating GaAs Substrate by Laser Bean Interaction

Published online by Cambridge University Press:  26 February 2011

N. V. Joshi  and
J. Lehman
N. V. Joshi
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, MN 55420
J. Lehman
Affiliation:
Honeywell Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, MN 55420
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Abstract

AlxGal-xAs alloy was obtained on semi-insulating GaAs by laser beam interaction. For this purpose, thin layers (~150 A) of AlAs and GaAs were deposited by MICVD on the semi-insulating undoped GaAs substrate and irradiated with a high power laser beam. For a certain critical value of incident power (7.1 watts/mm2), a layer of AlxGal-xAs alloy was formed. The nature of the alloy was examined by Auger and Far infrared reflectance spectroscopy. The later technique reveals the characteristic mode of AlxGal-xAs confirming its formation. Disorder induced LA mode was also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 185
Copyright
Copyright © Materials Research Society 1985

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References

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