Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-02T20:20:30.042Z Has data issue: false hasContentIssue false
  • English
  • Français

Focused Ion Beam Nano-Machined Structures For Strain Analysis By A Moiré Technique

Published online by Cambridge University Press:  11 February 2011

Biao Li ,
Huimin Xie  and
Xin Zhang
Biao Li
Affiliation:
Department of Manufacturing Engineering and Fraunhofer USA Center for Manufacturing, Innovation, Boston University, Boston, MA 02215
Huimin Xie
Affiliation:
Dept of Eng. Mechanics, Tsinghua University, Beijing 10080, China
Xin Zhang
Affiliation:
Department of Manufacturing Engineering and Fraunhofer USA Center for Manufacturing, Innovation, Boston University, Boston, MA 02215
Get access

Abstract

The accurate determination of residual stress/strain in thin films is especially important in the emerging field of MicroElectroMechanical Systems (MEMS). In this article, a focused ion beam (FIB) moiré method is proposed and demonstrated to measure the strain in MEMS structures. This technique is based on the advantages of the FIB system in nano-fabrication, imaging, in-situ deposition, and fine adjustment. Nano-grating lines with 70 nm width and 140 nm spacing are directly written on the top of the MEMS structures by ion milling without the requirement of an etch mask. The FIB moiré pattern is formed by the interference between a prepared specimen grating and FIB raster scan lines. The strain of the MEMS structures is derived by calculating the average spacing of moiré fringes. Since the local strain of a MEMS structure itself can be monitored during the process, the FIB moiré technique has many potential applications in the mechanical metrology of MEMS. As an example, the strain distribution along the sticking MEMS structures, and the contribution of surface oxidization and mass loading to the cantilever strain is determined by this FIB moiré technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 761: Symposia B/C/D/F/G/NN – Molecular Electronics , 2002 , NN5.4/J8.4
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Sharpe, W. N., Yuan, B., Vaidyanathan, R., Proc. Of the tenth IEEE International Workshop on Microelectromechanical Systems, Nagoya, Japan, 424(1997)Google Scholar
2. Guckel, H., Burns, D. W., Tilmans, H. A. C., DeRoo, D. W. and Rutigliano, C. R., Tech Digest, IEEE Solid State Sensor and Actuator Workshop, Hilton Head Island, SC, USA 96, 1988 Google Scholar
3. Lin, L., Pisano, A., Howe, R., IEEE Journal of Microelectromechanical Systems, 6, 313, 1997 Google Scholar
4. Read, D. T., Dally, J. W. and Szanto, M., Exp. Mech, 33, 110, 1993 Google Scholar
5. Kuball, M., Morrissey, F.H., Benyoucef, M., Harrison, I., Korakakis, D., and Foxon, C.T., Phys. Stat. Sol. (a) 176, 355, 1999 Google Scholar
6. Chiang, F-P, Moiré methods of strain analysis, Manual on Experimental Stress Analysis, 5th ed., ED Doyle, J F and Philips, J. W., Bethel, Connecticut: Society for Experimental Mechanics, Ch7, 1989 Google Scholar
7. Lu, P., Shen, F., O'Shea, S., Lee, K., Ng, T., Analysis of surface effects on mechanical properties of microcantilevers, Mater. Phys. Mech., 4, 51, 2001 Google Scholar
8. Mack, Iris, Fraundorf, P., UM-StL Physics & Astronomy, 17 July, 2000 Google Scholar
9. Shen, Y.-L., Suresh, S., and Blech, I. A., J. Appl. Phys., 80, 1388, 1996 Google Scholar