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Flash-Lamp-Induced Lateral Solidification of Thin Si Films

Published online by Cambridge University Press:  23 June 2011

K. Omori ,
G.S. Ganot ,
U.J. Chung ,
A.M. Chitu ,
A.B. Limanov  and
James S. Im
K. Omori
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA Technical Development Department, The Japan Steel Works, LTD., Yokohama, Japan
G.S. Ganot
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
U.J. Chung
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
A.M. Chitu
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
A.B. Limanov
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
James S. Im
Affiliation:
Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA Department of Materials Science and Engineering, College of Engineering, Korea Advanced Institute of Science and Technology, Korea
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Abstract

In this paper we show that a flash lamp can be employed to induce controlled lateral solidification of a-Si thin films. Specifically, a dual xenon-arc-lamp-based system was utilized to induce location-controlled complete melting by shaping the incident beam using a contact mask. The resulting laterally solidified microstructure consisted of exceptionally long grains (~10s to ~100s of μm) that were relatively free of intragrain-defects. With further development and optimization, the approach may lead to cost-effective/high-throughput processes and systems that can capture and enhance the advantages of laser-based/melt-mediated crystallization techniques.

Keywords

crystal growththin filmlaser annealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a03-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Bomke, H.A., Berkowitz, H.L., Harmatz, M., Kronenberg, S., Lux, R., Appl. Phys. Lett. 33, 955 (1978).10.1063/1.90232Google Scholar
2. Correra, L. and Pedulli, L., Appl. Phys. Lett. 37, 55 (1980).10.1063/1.91846Google Scholar
3. Wirth, H., Panknin, D., Skorupa, W., Niemann, E., Appl. Phys. Lett. 74, 979 (1999).Google Scholar
4. Pécz, B., Dobos, L., Panknin, D., Skorupa, W., Lioutas, C., Vouroutzis, N., Appl. Surf. Sci. 242, 185 (2005).10.1016/j.apsusc.2004.08.015Google Scholar
5. Terai, F., Matunaka, S., Tauchi, A., Ichimura, C., Nagatomo, T., Homma, T., J. Electrochem. Soc. 153, H147 (2006).10.1149/1.2200291Google Scholar
6. Im, James S., Chahal, M., van der Wilt, P.C., Chung, U.J., Ganot, G.S., Chitu, A.M., Kobayashi, N., Omori, K., Limanov, A.B., J. Cryst. Growth 312, 2775 (2010).10.1016/j.jcrysgro.2010.05.037Google Scholar
7. Gebel, T., Voelskow, M., Skorupa, W., Mannino, G., Privitera, V., Priolo, F., Napolitani, E., Carnera, A., Nucl. Instrum. Methods Phys. Res., Sect. B 186, 287 (2002).10.1016/S0168-583X(01)00900-4Google Scholar
8. Kim, H.J. and Im, James S., Appl. Phys. Lett. 64, 2303 (1994).Google Scholar
9. Im, James S., Crowder, M.A., Sposili, R.S., Leonard, J.P., Kim, H.J., Yoon, J.H., Gupta, V.V., Jin Song, H., Cho, H.S., Phys. Stat. Sol. (a) 166, 603 (1998).10.1002/(SICI)1521-396X(199804)166:2<603::AID-PSSA603>3.0.CO;2-03.0.CO;2-0>Google Scholar
10. Hawkins, W.G. and Biegelsen, D.K., Appl. Phys. Lett. 42, 358 (1983).10.1063/1.93939Google Scholar