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First Observation of Atomic Long Range Ordering in Metal-Oxide Based ZnMgO Wide Bandgap Heterostructures

Published online by Cambridge University Press:  10 February 2011

R. D. Vispute
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, Maryland 20742. also in Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742.
S. Choopun
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, Maryland 20742.
Y. H. Li
Affiliation:
also in Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742.
D. M. Chalk
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, Maryland 20742.
S. B. Ogale
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, Maryland 20742.
R. P. Sharma
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, Maryland 20742.
T. Venkatesan
Affiliation:
CSR, Department of Physics, University of Maryland, College Park, Maryland 20742. Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742.
A. Iliadis
Affiliation:
Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742.
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Abstract

We report the first observation of atomic long range ordering in the metal-oxide based wide bandgap (3.68 eV) ZnMgO alloy semiconductor thin films grown on sapphire (0001) by pulsed laser deposition. The ZnMgO system has the hexagonal wurtzite structure. The atomic ordering was deduced from the observations of forbidden x-ray diffraction peaks in the wurtzite structure. We show that under optimum thin film growth conditions, Zn and Mg preferentially occupy hcp sublattice. The relative intensity of the superlattice peak was largest for the Mg content in the range of 10%, which is about 50% of the solubility of Mg in ZnO. The observation of long range order in ZnMgO alloy semiconductor is quite important in the context of understanding issues related to the growth kinetics, surface reconstruction, and phase stability of metal-oxide based heterostructures and devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1]Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
[2]Choopun, S., Vispute, R. D., Noch, W., Balsamo, A., Sharma, R. P., Venkatesan, T., Illiadis, A. and Look, D. C., Appl. Phys. Lett. 75, (1999).Google Scholar
[3]Tang, Z. K., Wong, G. K. L., Yu, P., Kawasaki, M., Ohtomo, A., Koinuma, H., and Segawa, Y., Appl. Phys. Lett. 72, 3270 (1998).Google Scholar
[4]Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, T., and Segawa, Y., Appl. Phys. Lett. 72, 2466 (1998).Google Scholar
[5]Sharma, A.K., Narayan, J., Muth, J.F., Teng, C.W., Jin, C., Kvit, A., Kolbas, R.M., and Holland, O.W., Appl. Phys. Lett. 75, 3327 (1999).Google Scholar
[6]Kuan, T. S., Kuech, T. F., Wang, W. I., and Wilkie, E. L., Phys. Rev. Lett. 54, 201 (1985).Google Scholar
[7]Jen, H. R., Chemg, M. J., and Stringfellow, G. B., Appl. Phys. Lett. 48, 1603 (1986).Google Scholar
[8]Shahid, M. A., Mahajan, S., Laughlin, D. E., and Cox, H. M., Phys. Rev Lett. 58, 2567 (1987).Google Scholar
[9]Korakakis, D., Ludwig, K. F. Jr, and Moustakas, T. D., Appl. Phys. Lett. 71, 72 (1997).Google Scholar
[10]Doppalapudi, D., Basu, S. N., and Moustakas, T. D., J. Appl. Phys. 85, 883 (1999).Google Scholar
[11]Gomyo, A., Kobayashi, K., Kawata, S., Hino, I., and Suzuki, T., J. Crystal Growth 77, 367 (1986).Google Scholar
[12]Ruterana, P., Nouet, G., Van der Stricht, W., Moerman, I., and Considine, L., Appl. Phys. Lett. 72, 1742 (1998).Google Scholar
[13]Choopun, S., Vispute, R. D., Sharma, R. P., and Venkatesan, T., (to be published). 194Google Scholar