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Ferromagnetic Ge1-xMx (M = Mn, Co, and Fe) Nanowires

Published online by Cambridge University Press:  26 February 2011

Yong Jae Cho ,
chang hyun Kim  and
jeunghee Park
Yong Jae Cho
Affiliation:
[email protected], Korea University, Department of Material Chemistry, In the building of school of life science and biotechnilogy Rm #235, 5-ka,Anam-dong Sungbuk-ku Seou, Seoul, 136-701, Korea, Republic of, 02-3290-3973, 02-3290-3992
chang hyun Kim
Affiliation:
[email protected], Korea University, Department of Material Chemistry, in the building of school of life science and biotechnology Rm#235 5-ka, Anam-dong Sungbuk-ku, Seoul, 136-701, Korea, Republic of
jeunghee Park
Affiliation:
[email protected], Korea University, Department of Material Chemistry, in the building of school of life science and biotechnology Rm#235 5-ka, Anam-dong Sungbuk-ku, Seoul, 136-701, Korea, Republic of
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Abstract

We synthesized Ge and Ge1-xMx (M = Mn, Co, and Fe, x ≤ 0.2) nanowires using thermal vapour transport method. All nanowires consisted of single-crystalline Ge nanocrystals grown uniformly with the [111] direction. High-resolution X-ray diffraction pattern shows no cluster formation for all Ge1-xMx nanowires. The Mn and Fe doping decreases the lattice constant, but not Co doping. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurement revealed that the Mn2+ and Fe2+ ions preferentially occupy the tetrahedral sites, substituting for Ge. We suggest that the Mn or Fe ions produce dopant-acceptor hybridization with host defects in p-type Ge, but not Co ions. The magnetic moment of Mn2+ ions reaches a maximum for x = ∼ 0.1, which is much larger than that of the Fe2+ ions. The magnetization measurement also confirms the room-temperature ferromagnetism of Mn-doped Ge nanowires, which is maximized at x = ∼ 0.1. We conclude that the Mn ions are most efficiently doped into the Ge nanowires to form a ferromagnetic semiconductor.

Keywords

Geferromagneticmagnetic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1032: Symposium I – Nanoscale Magnetic Materials and Applications , 2007 , 1032-I14-05
Copyright
Copyright © Materials Research Society 2008

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References

1.(a) Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.; Daughton, J. M.; von Molnár, S.; Roukes, M. L.; Chtchelkanova, A. Y.; Treger, D. M. Science 2001, 294, 1488. (b) Ohno, H. Science, 1998, 281, 951.10.1126/science.1065389Google Scholar
2. Huang, X.; Makmal, A.; Chelikowsky, R.; Kronik, L. Phys. Rev. Lett. 2005, 94, 236801.10.1103/PhysRevLett.94.236801Google Scholar
3. Park, Y. D.; Hanbicki, A. T.; Erwin, S. C.; Helberg, C.S.; Sullivan, J. M.; Mattson, J. E.; Ambrose, T. F.; Wilson, A.; Spanos, G.; Jonker, B. T. Science, 2002, 295, 651.10.1126/science.1066348Google Scholar
4. Tsui, F.; He, L.; Ma, L.; Tkachuk, A.; Chu, Y. S.; Nakajima, K.; Chikyow, T. Phys. Rev. Lett. 2003, 91, 177203.10.1103/PhysRevLett.91.177203Google Scholar
5. Choi, S.; Hong, S. C.; Cho, S.; Kim, Y.; Ketterson, J. B.; Jung, C.-U.; Rhie, K.; Kim, B.-J.; Kim, Y. C. Appl. Phys. Lett.2002, 81, 3606.Google Scholar
6.(a)Zeng, C.; Erwin, S. C.; Feldman, L. C.; Li, A. P.; Jin, R.; Thompson, J. R.; Weitering, H. H. Appl. Phys. Lett. 2003, 83, 5002. (b) Li, A. P.; Wendelken, J. F.; Shen, J.; Feldman, L. C.; Thompson, J. R.; Weitering, H. H. Phys. Rev. B 2005, 72, 195205. (c) Li, A. P.; Shen, J.; Thompson, J. R.; Weitering, H. H. Appl. Phys. Lett. 2005, 86, 152507. (d) Li, A. P.; Zeng, C.; van Benthem, K.; Chisholm, M. F.; Shen, J.; Nageswara Rao, S. V. S.; Dixit, S. K.; Feldman, L. C.; Petukhov, A. G.; Foygel, M.; Weitering, H. H. Phys. Rev. B 2007, 75, 201201.10.1063/1.1633684Google Scholar
7.(a) D'Orazio, F.; Lucari, F.; Santucci, S.; Picozzi, P.; Verna, A.; Passacantando, M.; Pinto, N.; Morresi, L.; Gunnella, R.; Murri, R. J. Magn. Magn. Mater. 2003, 262, 158. (b) Pinto, N.; Morresi, L.; Gunnella, R.; Murri, R.; D'Ozario, F.; Lucari, F.; Santucci, S.; Picozzi, P.; Passacantando, M.; Verna, A. J. Mater. Sci. 2003, 14, 337. (a) Stroppa, A.; Picozzi, S.; Continenza, A. Phys. Rev. B 2003, 68, 155203. (b) Continenza, A.; Antoniella, F.; Picozzi, S. Phys. Rev. B 2004, 70, 035310. (c) Gunnella, R.; Morresi, L.; Pinto, N.; Murri, R.; Ottaviano, L.; Passacantando, M.; D'Ozario, F.; Lucari, F. Surf. Sci. 2005, 577, 22. (d) Pinto, N.; Morresi, L.; Ficcadenti, M.; Murri, R.; D'Ozario, F.; Lucari, F.; Boarino, L.; Amato, G. Phys. Rev. 2005, 72, 165203. (e) Picozzi, S.; Ottaviano, L.; Passacantando, M.; Profeta, G.; Continenza, A.; Priolo, F.; Kim, M.; Freeman, A. J. Appl. Phys. Lett. 2005, 86, 062501. (f) Verna, A.; Ottaviano, L.; Passacantando, M.; Santucci, S.; Picozzi, P.; D'Orazio, F.; Lucari, F.; De Biase, M.; Gunnella, R.; Berti, M.; Gasparotto, A.; Impellizzeri, G.; Priolo, F. Phys. Rev. B 2006, 74, 085204. (g) Ottaviano, L.; Passacantando, M.; Picozzi, S.; Continenza, A.; Gunnella, R.; Verna, A.; Bihlmayer, G.; Impellizzeri, G.; Priolo, F. Appl. Phys. Lett. 2006, 88, 061907. (h) Ottaviano, L.; Parisse, P.; Passacantando, M.; Picozzi, S.; Verna, A.; Impellizzeri, G.; Priolo, F. Surf. Sci. 2006, 600, 4723. (i) Passacantando, M.; Ottaviano, L.; D'Ozario, F.; Lucari, F.; De Biase, M.; Impellizzeri, G.; Priolo, F. Phys. Rev. B 2006, 73, 195207.10.1016/S0304-8853(03)00041-6Google Scholar
8. Cho, Y. M.; Yu, S. S.; Ihm, Y. E.; Kim, D.; Kim, H.; Baek, J. S.; Kim, C. S.; Lee, B. T. J. Magn. Magn. Mater. 2004, 282, 385.10.1016/j.jmmm.2004.04.089Google Scholar
9. Kang, J.-S.; Kim, G.; Wi, S. C.; Lee, S. S.; Choi, S.; Cho, S.; Han, S. W.; Kim, K. H.; Song, H. J.; Shin, H. J.; Sekiyama, A.; Kasai, S.; Suga, S.; Min, B. I. Phys. Rev. Lett. 2005, 94, 147202.10.1103/PhysRevLett.94.147202Google Scholar
10. Sugahara, S.; Lee, K. L.; Yada, S.; Tanaka, M. Jp. J. Appl. Phys. 2005, 44, L1426.10.1143/JJAP.44.L1426Google Scholar
11. Jaeger, C.; Bihler, C.; Vallaitis, T.; Goennenwein, S. T.B.; Opel, M.; Gross, R.; Brandt, M. S. Phys. Rev. B 2006, 74, 045330.10.1103/PhysRevB.74.045330Google Scholar
12. Li, H.; Wu, Y.; Guo, Z.; Luo, P.; Wang, S. J.Appl. Phys. 2006, 100, 103908.10.1063/1.2375015Google Scholar
13. Thaler, G.; Frazier, R.; Gila, B.; Stapleton, J.; Davidson, M.; Abernathy, C. R.; Pearton, S. J.; Segre, C. Appl. Phys. Lett. 2004, 84, 1314.10.1063/1.1649819Google Scholar
14.(a) Kulkarni, J. S.; Kazakova, O.; Erts, D.; Morris, M. A.; Shaw, M. T.; Holmes, J. D. Chem. Mater. 2005, 17, 3615. (c) Kazakova, O.; Kulkarni, J. S.; Holmes, J. D.; Demokritov, S. O. Phys. Rev. B. 2005, 72, 94415. (d) Kazakova, O.; Kulkarni, J. S.; Arnold, D. C.; Holmes, J. D. J. Appl. Phys.2007, 101, 9H108.10.1021/cm050352aGoogle Scholar
15. Wang, X.; Xu, J.; Zhang, B.; Yu, H.; Wang, J.; Zhang, X.; Yu, J.; Li, Q. Adv. Mater. 2006, 18, 2476.Google Scholar
16. Kang, Y. J.; Kim, D. S.; Lee, S. H.; Park, J.; Chang, J.; Moon, J. Y.; Lee, G.; Yoon, J.; Jo, Y.; Jung, M.–H. J. Phys. Chem. C 2007, 111, 14956.10.1021/jp074289jGoogle Scholar
17. Kittilstved, K. R.; Liu, W. K.; Gamelin, R. Nature Mater. 2006, 5, 291.Google Scholar
18. Continenza, A.; Profeta, G.; Picozzi, S. Phys. Rev. B 2006, 73, 035212.10.1103/PhysRevB.73.035212Google Scholar
19. Grabis, J.; Bergmann, A.; Nefedov, A.; Westerholt, K.; Zabel, H. Phys. Rev. B 2005, 72, 022437.Google Scholar
20. Miyamoto, K.; Iori, K.; Kimura, A.; Xie, T.; Taniguchi, M.; Qiao, S.; Tschiya, K. Solid State Comm. 2003, 128, 163.10.1016/j.ssc.2003.08.007Google Scholar
21.(a)Liou, Y.; Su, P. W.; Shen, Y. L. Appl. Phys. Lett. 2007, 90, 182508. (b) Liou, Y.; Lee, M. S.; You, K. L. Appl. Phys. Lett. 2007, 91, 082505.10.1063/1.2737372Google Scholar