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Fermi-Energy-Dependent H-Diffusion in a-Si:H a Microscopic Interpretation

Published online by Cambridge University Press:  26 February 2011

Gerhard Moller
Gerhard Moller*
Affiliation:
Messerschmitt-Bölkow-Blohm GmbH, Postfach 80 11 09, 8000 München 80, Fed. Rep. of Germany.
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Abstract

It is proposed that hydrogen in a-Si:H diffuses via a defect-mediated process in which the supporting defects are produced by charge-induced bond breaking. As the efficiency of defect production scales with the availability of mobile charge carriers, our model – in agreement with experiment – predicts small diffusion rates in undoped and compensated and relatively large rates in heavily doped material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 321
Copyright
Copyright © Materials Research Society 1988

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