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Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy

Published online by Cambridge University Press:  03 September 2012

H. Witte ,
A. Krtschil ,
M. Lisker ,
D. Rudloff ,
J. Christen ,
A. Krost ,
M. Stutzmann  and
F. Scholz
H. Witte
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Krtschil
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
M. Lisker
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
D. Rudloff
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
J. Christen
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Krost
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institute, Technical University Munich, D-85748 Garching, Germany
F. Scholz
Affiliation:
4th Institute of Physics, University Stuttgart, D-70550 Stuttgart, Germany
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Abstract

In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects de-tected by thermal admittance spectroscopy as compared for deep level transient spectros-copy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.82
Copyright
Copyright © Materials Research Society 1999

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