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Published online by Cambridge University Press: 11 February 2011
The magnitudes and evolutions of two photoinduced absorption nonlinearities, absorption bleaching and field screening, were compared and investigated by employing electroabsorption and femtosecond pump-probe spectroscopy in a biased InGaN/GaN p-i-n double heterostructure. Steady state electroabsorption measurements indicate the field induced absorption coefficient changes in this structure are caused by the Franz-Keldysh effect. The temporal resolution of the absorption bleaching spectra suggests that the photoinduced carriers rapidly relaxed to the InGaN band edge within several picoseconds. As the applied reverse bias field was increased, the transition of the differential absorption spectral signature from the signature for absorption bleaching to the signature for field screening was observed. The magnitude of the change in absorption due to photoinduced carrier screening of the applied field is quantified and compared to absorption bleaching.