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Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects

Published online by Cambridge University Press:  16 May 2012

Kei Suzuki ,
Masaki Wakita  and
Yuzo Shinozuka
Kei Suzuki
Affiliation:
Faculty of Systems Engineering, Materials Science and Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
Masaki Wakita
Affiliation:
Faculty of Systems Engineering, Materials Science and Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
Yuzo Shinozuka
Affiliation:
Faculty of Systems Engineering, Materials Science and Chemistry, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
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Abstract

Possibility of feedback and inflation mechanism among carrier captures by a deep-level defect and transient induced lattice vibrations is discussed using proper configuration coordinate diagrams for many carriers. Treating the lattice motion classically we selfconsistently simulate the time evolution of the interaction mode and a series of athermal captures of electron(s) and hole(s). When both the activation energies Eacte and Eacth are small, a series of successive athermal captures is enhanced and probable for high carrier densities, however, we find that the possibility of inflation in the amplitude of the lattice vibration critically depends on the minority capture rate and the relative width of the phonon frequency distribution.

Keywords

defectselectron-phonon interactionsdislocations
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g05-02-ii06-02
Copyright
Copyright © Materials Research Society 2012

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References

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