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Fatigue of Damascene Copper Lines under AC Loading

Published online by Cambridge University Press:  01 February 2011

Stéphane Moreau ,
Sylvain Maitrejean  and
Gérard Passemard
Stéphane Moreau
Affiliation:
[email protected], CEA-LETI MINATEC, D2NT/LBE, 17 avenue des Martyrs, Grenoble, France, Metropolitan
Sylvain Maitrejean
Affiliation:
[email protected], CEA-LETI MINATEC, D2NT/LBE, 17 avenue des Martyrs, Grenoble, N/A, France, Metropolitan
Gérard Passemard
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, France, Metropolitan
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Abstract

Fatigue in damascene copper line has been investigated by using alternating currents to generate cyclic temperatures and stresses/strains. Interconnects using beyond 65 nm node design rules and materials have been studied. We demonstrate that cyclic thermal strains lead to Cu or Cu/Co-based cap surface modification and open circuits in Cu lines during the application of an alternating electrical current. We underline that the narrower the copper lines are, the more reliable they are and the major role of the cap layer to improve the Cu lines reliability. Moreover, a statistical approach is presented in this paper in order to discuss about the thermal fatigue associated distribution model (exponential, lognormal and Weibull distributions). At present, the lognormal distribution seems to be the most appropriate one.

Keywords

microelectronicsmetalfatigue
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B07-17
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1International Technology Roadmap for Semiconductors, http://public.itrs.net (2005).Google Scholar
2 Hau-Riege, Ch. S., Microelectronics Reliability 44, 195 (2004).Google Scholar
3 Philofsky, E., Ravi, K., Hall, E., and Black, J., in: Proc. IEEE 9th Reliability Phys. Symp., Las Vegas, NV, (1971), pp. 120–128.Google Scholar
4 Keller, R.R., Mönig, R., Volkert, C.A., Arzt, E., Schwaiger, R. and Kraft, O., in: Baker, P., Korhonen, M.A., Arzt, E., Ho, P.S. (Eds.), Stress Induced Phenomena in Metallization, AIP Conference Proceedings of the 6th International Workshop of Stress Induced Phenomena in Metallization, Vol. 612, AIP, Melville, NY, 2002, pp. 119-1321.Google Scholar
5 Mönig, R., Keller, R.R. and Volkert, C.A., Rev. Sci. Instrum. 75, 4997 (2004).Google Scholar
6 Keller, R.R., Geiss, R.H., Cheng, Y.-W., and Read, D.T., in: Mat. Res. Soc. Symp. Proc. 863: Materials, Technology, and Reliability of Advanced Interconnects, 2005, pp. 295–300.Google Scholar
7 Fox, R., Hinsinger, O., Richard, E., Sabouret, E., Berger, T., Goldberg, C., Humbert, A., Imbert, G., Brun, P., Ollier, E., Maurice, C., Guillermet, M., Monget, C., Plantier, V., Bono, H., Zaleski, M., Mellier, M., Jacquemin, J.-P., Flake, J., Sharma, B.G., Broussous, L., Farcy, A., Arnal, V., Gonella, R., Maubert, S., Girault, V., Vannier, P., Reber, D., Schussler, A., Mueller, J. and Besling, W., in: Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, 2005, pp. 81–84.Google Scholar
8 Decorps, T., Haumesser, P.H., Olivier, S., Roule, A., Joulaud, M., Pollet, O., Avale, X. and Passemard, G., Microelectron. Eng., 83/11-12, 2082 (2006).Google Scholar
9 Moreau, S., Maitrejean, S. and Passemard, G., Microelectron. Eng. (2007) in press.Google Scholar
10 Nelson, W., Accelerated testing. Statistical Models, Test Plans, and Data Analyses (Wiley Interscience, 1990).Google Scholar
11 Ireson, W.G., Coombs, C.F. Jr, Moss, R.Y., Handbook of reliability engineering and management, 2nd ed., (McGraw-Hill, 1995).Google Scholar
12 Mönig, R., Doctoral Thesis, University of Stuttgart, Germany, 2005.Google Scholar
13Reliasoft, Reliability HotWire, 71 (2007), http://xsxswww.weibull.com/hotwire/issue71/relbasics71.htm, 03/20/2007.Google Scholar
14 http://www.weibull.com/lifedatawebcontents.htm, 03/20/2007.Google Scholar
15NIST/SEMATECH e-Handbook of Statistical Methods, http://www.itl.nist.gov/div898/handbook/, 03/20/2007.Google Scholar
16 Kececioglu, D., Reliability and Life Testing Handbook, Vol. I, (Prentice Hall, NJ, 1993).Google Scholar
17 Kececioglu, D., Smith, R.E. and Felsted, E.A., Annals of Assurance Sciences, 357 (1969).Google Scholar