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Fast Diamond Photoconductors

Published online by Cambridge University Press:  21 February 2011

T. Pochet ,
B. Brullot ,
R. Galli  and
C. Rubbelynck
T. Pochet
Affiliation:
LETI (CEA-Technologies Avancées), DEIN/SPE, Centre d'Etudes Nucléires de Saclay, 91191 Gif-sur-Yvette Cedex, France
B. Brullot
Affiliation:
Centre d'Etudes Nucléaires, DAM/CEM, B.P. 12, 91680 Bruyères-le-Chatel, France
R. Galli
Affiliation:
Centre d'Etudes Nucléaires, DAM/CEM, B.P. 12, 91680 Bruyères-le-Chatel, France
C. Rubbelynck
Affiliation:
Centre d'Etudes Nucléaires, DAM/CEM, B.P. 12, 91680 Bruyères-le-Chatel, France
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Abstract

Preliminary results on the response of type Ib and IIa diamond photodetectors to fast laser pulse exposures at 265 and 530 nm are presented. The influence of the applied bias, the laser wavelengths and the light intensity on the detector sensitivity is studied. Also, recent measurements with 1.25 MeV gamma ray pulses are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 281
Copyright
Copyright © Materials Research Society 1993

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References

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