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Fabrication, Processing and Characterization of Thin Film ZnO for Integrated Optical Gas Sensors

Published online by Cambridge University Press:  31 January 2011

Eliana Kamińska ,
Anna Piotrowska ,
Iwona Pasternak ,
Marek Ekielski ,
Krystyna Gołaszewska ,
Witold Rzodkiewicz ,
Tomasz Wojciechowski ,
Elżbieta Dynowska ,
Przemysław Struk  and
Tadeusz Pustelny
Eliana Kamińska
Affiliation:
[email protected], Institute of Electron Technology, Warsaw, Poland
Anna Piotrowska
Affiliation:
[email protected], Institute of Electron Technology, Warsaw, Poland
Iwona Pasternak
Affiliation:
[email protected], Institute of Electron Technology, Warsaw, Poland
Marek Ekielski
Affiliation:
[email protected], Institute of Electron Technology, Warsaw, Poland
Krystyna Gołaszewska
Affiliation:
[email protected], Institute of Electron Technology, Warsaw, Poland
Witold Rzodkiewicz
Affiliation:
[email protected], Institute of Electron Technology, Warsaw, Poland
Tomasz Wojciechowski
Affiliation:
[email protected], Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Elżbieta Dynowska
Affiliation:
[email protected], Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Przemysław Struk
Affiliation:
[email protected], Silesian Univeristy of Technology, Gliwice, Poland
Tadeusz Pustelny
Affiliation:
[email protected], Silesian University of Technology, Gliwice, Poland
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Abstract

Zinc oxide layers deposited on quartz substrates by means of RF reactive magnetron sputtering with subsequent RTP annealing in a nitrogen flow at 400°C and in an oxygen flow at 500°C have been investigated in applications to waveguide structures. The ZnO films reveal a highly c-oriented columnar structure with a surface roughness of 4.3 nm. Annealing causes a significant increase of the lattice constant to the value of 5.210±0.001 Å suggesting the relaxation of the stress in the film. The annealing process causes a significant improvement of propagation properties of the fabricated waveguide structures in comparison to structures using as-deposited ZnO films. The minimal attenuation coefficient of the 630 nm thick films was found to be 2.8 and 3.0 dB/cm for TE0 and TM0 modes respectively.

Keywords

thin filmoptical propertiesthermal stresses
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-14
Copyright
Copyright © Materials Research Society 2010

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