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Fabrication of Thin-Film Transistors Using PECVD-Grown Carbon Nanotubes and Their Application to Integrated Circuits

Published online by Cambridge University Press:  05 April 2012

Takashi Mizutani  and
Shigeru Kishimoto
Takashi Mizutani
Affiliation:
Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan.
Shigeru Kishimoto
Affiliation:
Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan. Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan.
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Abstract

Medium scale integrated circuits with 108 CNT-TFTs have been fabricated using CNTs grown by plasma enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of CNTs with semiconducting behavior in the FET current–voltage characteristics. High-speed operation with a switching time of 0.51 μs/gate, which is highest in the CNT-TFT integrated circuits to our knowledge, was demonstrated by a 53-stage ring oscillator. Characterization of CNT-TFTs using scanning probe microscopy has also been performed. The island-like structure in the electrical properties of the CNT network was observed even in a high-density CNT network in the subthreshold regime. This was explained by the decrease of the effective number of CNTs which contribute the electrical conduction.

Keywords

nanostructurescanning probe microscopy (SPM)semiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1451: Symposium DD/EE – Nanocarbon Materials and Devices , 2012 , pp. 159 - 168
Copyright
Copyright © Materials Research Society 2012

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