Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-27T02:17:46.094Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of SiN-assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-band MMICs for 60GHz WPAN system

Published online by Cambridge University Press:  26 February 2011

Hokyun Ahn ,
Jong-Won Lim ,
Hong-Gu Ji ,
Woo-Jin Chang ,
Jae-Kyoung Mun  and
Haecheon Kim
Hokyun Ahn
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of, 82-42-860-6135, 82-42-860-6183
Jong-Won Lim
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Hong-Gu Ji
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Woo-Jin Chang
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Jae-Kyoung Mun
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Haecheon Kim
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Get access

Abstract

In this paper, the fabrication technology of SiN-assisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-bands MMICs for the high rate personal area network (WPAN) system was described. The effect of the gate shape such as the 1st-deck and the 2nd-deck gate head size on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size were also presented. At 0.22um of the optimum 1st-deck gate head size and 1um of the 2nd-deck head size, the p-HEMT device with two finger gates of 0.12um length × 50um width shows an extrinsic transconductance of 529mS/mm and a threshold voltage of -1.19V. The cut-off frequency and the maximum frequency of oscillation were 94.7GHz and 189.1GHz, respectively. The gate shape of the p-HEMT device such as a gate head size is correlated to parasitic capacitances including Cgs which have effects on RF performances including a cut-off frequency (fT) and a maximum frequency of oscillation (fmax).

Keywords

III-Velectronic materiallithography (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 969: Symposium W – Heterogeneous Integration of Materials for Passive Components and Smart Systems , 2006 , 0969-W03-10
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ohata, K., Maruhashi, K., Ito, M., Kishimoto, S., Ikuina, K., Hashiguchi, T., Ikeda, K. and Takahashi, N., IEEE MTT-S Dig. (2003) 373.Google Scholar
2. Tanaka, H., Suematsu, E., Handa, S., Motouchi, Y., Takahashi, N., Yamada, A., Matsumoto, N. and Sato, H., IEEE GaAs Dig. (2001) 79.Google Scholar
3. Handa, S., Suematsu, E., Tanaka, H., Motouchi, Y., Yagura, M., Yamada, A. and Sato, H., IEEE GaAs Dig. (2003) 227.Google Scholar
4. Brech, H., Grave, T., Simlinger, T. and Selberger, S., IEEE GaAs IC sym. (1997) 66.Google Scholar