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Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam

Published online by Cambridge University Press:  16 February 2011

R. J. Young ,
E. C. G. Kirk ,
D. A. Williams  and
H. Ahmed
R. J. Young
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
E. C. G. Kirk
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
D. A. Williams
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
H. Ahmed
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
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Abstract

A new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 205
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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