Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T01:07:53.308Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of nano-needle arrays on diamond surface by reactive ion etching

Published online by Cambridge University Press:  29 February 2012

T. Misu ,
K. Koh  and
T. Arai
T. Misu
Affiliation:
Department of Home Electronics Engineering, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi 243-0292, Japan
K. Koh
Affiliation:
Department of Home Electronics Engineering, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi 243-0292, Japan
T. Arai
Affiliation:
Department of Electrical and Electronic Engineering, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi 243-0292, Japan
Get access

Abstract

CVD polycrystalline diamond surfaces were etched using reactive ion etching system with either a conventional stainless steel electrode or MgO sintered ceramic containing electrode. The micro-needle array of high aspect on diamond substrate surfaces obtained with MgO electrode was fabricated by using back-sputtering from MgO electrode. The RMS roughness of diamond substrate surfaces obtained with MgO electrode is higher than those obtained with stainless steel electrode.

Keywords

diamondnanostructurereactive ion etching
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1395: Symposium N – Diamond Electronics and Biotechnology–Fundamentals to Applications V , 2012 , mrsf11-1395-n12-46
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Goto, M., Sakai, T. and Arai, T., Jpn. J. Appl. Phys. 33, 896, (1994).Google Scholar
2. Hagstrum, H. D., Phys. Rev., 122, 83 (1961).Google Scholar
3. Bachmann, P. K., Elsbergen, V. V., Wiechert, D. U., Zhong, G. and Robertson, J., Diamond Relat. Mater., 10, 809 (2001).Google Scholar
4. Geis, M. W., Twichell, J. W. and Lyszczarz, T. M., J. Vac. Sci. Technol., B 14, 2060 (1996).Google Scholar
5. Baik, E. S. and Baik, Y. J., J. Mater. Res., 15, 923 (2000).Google Scholar
6. Ando, Y., Nishibayashi, Y., Kobashi, K., Hirao, T., Oura, K., Diamond Relat. Mater., 11, 824 (2002).Google Scholar
7. Choi, E. -H. A., Lim, J. -Y., Kim, Y. -G., Ko, J. -J., Kim, D. -I., Lee, C. -W. and Cho, G. -S., J. Appl.Phys. 86, 6525 (1999).Google Scholar
8. Auday, G., Guillot, Ph. and Galy, J., J. Appl. Phys., 88, 4871 (2000).Google Scholar
9. Chen, J., Deng, S. Z., Chen, J. and Xu, N. S., Appl. Phys. Lett. 80, 4030, (2002).Google Scholar
10. Ohtsu, Y. and Fujita, H., Appl. Phys. Lett., 85, 4875 (2004).Google Scholar
11. Misu, T., Uehara, T., Ono, S., Goto, M., Arai, T., 19th International Symposium on Plasma Chemistry, Full-Papers USB media, Bochum, Germany, P2-4-21, (2009).Google Scholar