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Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate

Published online by Cambridge University Press:  01 February 2011

Shuichi Miura ,
Takahiro Fujii ,
Motoaki Iwaya ,
Satoshi Kamiyama ,
Hiroshi Amano  and
Isamu Akasaki
Shuichi Miura
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan, +81-52-838-2430, +81-52-832-1244
Takahiro Fujii
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Motoaki Iwaya
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Satoshi Kamiyama
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Hiroshi Amano
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Isamu Akasaki
Affiliation:
[email protected], Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
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Abstract

An AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm2) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 105 A/W.

Keywords

nitridephotoconductivitydevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I02-02
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCE

1. Khan, M. A., Kuznia, J. N., Olson, D. T., Van Hove, J. M., Blasingame, M. and Reitz, L. F, Appl. Phys. Lett. 60, 2917 (1992).Google Scholar
2. Pernot, C., Hirano, A., Iwaya, M., Detchprohm, T., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 38, L487 (1999).Google Scholar
3. Khan, M. A., Kuznia, J. N., Olson, D. T., Blasingame, M. and Bhattarai, A. R., Appl. Phys. Lett. 63, 2455 (1993).Google Scholar
4. Osinsky, A., Gangopadhyay, S., Kim, B. W., Anwar, M. Z., Khan, M. A., Kuksenkov, D. V. and Temkin, H., Appl. Phys. Lett. 72, 742 (1998).Google Scholar
5. Chen, Q., Khan, M. A., Sun, C. J. and Yang, J. W.: Electron. Lett. 31, 1781 (1995).Google Scholar
6. Pernot, C., Hirano, A., Iwaya, M., Detchprohm, T., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys. 39, L387 (2000).Google Scholar
7. Khan, M. A., Shur, M. S., Chen, Q., Kuznia, J. N. and Sun, C. J., Electron. Lett. 31, 398 (1995).Google Scholar
8. Tsuyukuchi, N., Nagamatsu, K., Hirose, Y., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 45, L319 (2006).Google Scholar
9. Fujii, T., Tsuyukuchi, N., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 45, L1048 (2006).Google Scholar
10. Fujii, T., Tsuyukuchi, N., Hirose, Y., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I., to be published Jpn. J. Appl. Phys.Google Scholar