Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-12T08:03:08.676Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of High Quality Silicide Layers by Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Karen J Reeson ,
Ann De Veirman ,
Russell Gwilliam ,
Chris Jeynes ,
Brian J Sealy ,
J Landuyt ,
Udo Bussmann ,
J K N Lindner  and
E H te Kaat
Karen J Reeson
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Ann De Veirman
Affiliation:
University of Antwerp (RUCA), Groenenborgerlaan 171, B2020, Antwerpen, Belgium
Russell Gwilliam
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Chris Jeynes
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Brian J Sealy
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
J Landuyt
Affiliation:
University of Antwerp (RUCA), Groenenborgerlaan 171, B2020, Antwerpen, Belgium
Udo Bussmann
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
J K N Lindner
Affiliation:
Dept Physics, University of Dortmund, POB 500 500, 4600 Dortmund 50 FRG
E H te Kaat
Affiliation:
Dept Physics, University of Dortmund, POB 500 500, 4600 Dortmund 50 FRG
Get access

Abstract

Buried layers of CoSi2 have been successfully fabricated in (100) single crystal silicon by implanting 350 keV Co+ to doses in the range 2 - 7 × 1017 cm−2 at a temperature of ∼550°C. For doses ≥ 4 × 101759Co+ cm−2, a continuous buried layer of CoSi2 grows epitaxially, during implantation. After annealing (1000°C 30 minutes) continuous layers of stoichiometric CoSi2 which are coherent with the matrix are produced for doses ≥ 4 × 101759Co+ cm−2. For doses of ≤ 2 × 101759Co+, cm−2, discrete octahedral precipitates of monocrystalline CoSi2 are observed. Isochronal annealing (for 5s) at temperatures in the range 800–1200°C, shows that at temperatures ≥ 900°C there is significant redistribution of the Co from B-type or interstitial sites → substitutional A-type lattice sites. As the anneal temperature is increased there is a corresponding improvement in the crystallinity and coherency of the Si and CoSi2 lattices. This shows that at a given temperature much of the Co redistribution takes place within the first 5s of the anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 217
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 White, A E, Short, K T, Dynes, R C, Gibson, J M and R Hull Materials Research Society Symposia Proceedings 107, 3 (1988).Google Scholar
2 White, A E, Short, K T, Batstone, J L, Jacobson, D C, Poate, J M and West, K W Applied Physics Letters 50, 95 (1987).Google Scholar
3 White, A E, Short, K T, Dynes, R C, Gamo, J P and Gibson, J M Materials Research Society Symposia Proceedings 74,481 (1987).Google Scholar
4 Barbour, J C, Picraux, S T and Doyle, B L Materials Research Society Symposia Proceedings 107, 269 (1988).Google Scholar
5 Madakson, P, Clark, G J, Legoues, F K, d'Heurle, F M and Baglin, J E E Materials Research Society Symposia Proceedings 107, 281 (1988).Google Scholar
6 Lindner, J K N and Kaat, E H te Materials Research Society Symposia Proceedings 107, 275 (1988).Google Scholar
7 White, A E Ion Beam Modification of Materials-88, Tokyo, Japan, June (1988), to be published Nuclear Instruments and Methods B.Google Scholar
8 Ommen, A H van, Ottenhiem, J J M, Theunissen, A M L and Mouwen, A G Appl Phys Lett 53, 669 (1988).Google Scholar
9 Lindner, J K N and Kaat, E H te J Materials Research 3, 1238 (1989).Google Scholar
10 Reeson, K J, Veirman, A De, Gwilliam, R, Jeynes, C, Scaly, B J and Landuyt, J Van Oxford Conference on Microscopy of Semiconducting Materials, April (1989) to be published in Inst of Phys Conf Ser.Google Scholar
11 Bulle-Lieuwma, C W T, Ommen, A H Van and Ijzendoom, L J Van Appl Phys Lett 54, 244 (1989).Google Scholar
12 Bulle-Lieuwma, C W T, Ommen, A H Van Oxford Conference on Microscopy of Semiconducting Materials, April (1989) to be published in Inst of Phys Conf Ser.Google Scholar
13 Hensel, J C, Levi, A F J, Tung, R T and Gibson, J M Appl Phys Lett 41, 151 (1985).Google Scholar
14 Levi, A F J, Tung, R T, Batstone, J Land Anzlowar, M Materials Research Society Symposia Proceedings 107, 259 (1988).Google Scholar
15 Murarka, S P in Silicides for VLSI Applications. Academic Press, New York, (1983).Google Scholar
16 Bulle-Lieuwma, C W T, Ommen, A H van and Homstra, J Materials Research Society Symposia Proceedings 102, 377 (1988).Google Scholar
17 Gwilliam, R, Bensalem, R, Sealy, B J and Stephens, K G, Physica 129B, 440 (1985).Google Scholar
18 Bourret, A in Microscopy of Semiconducting Materials Inst Phys Conf Ser 87, 39 (1987)Google Scholar
19 Samsanov, G V and Vinitskii, I M in Handbook of Refractory Materials IFI/Plenum, New York, 1980 Google Scholar
20 Tung, R T, Poate, J M, Bean, J C, Gibson, J M and Jacobson, D C Thin Solid Films 29, 77 (1982).Google Scholar