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The Fabrication of Complex Membrane Structures in N-GaAs for Micromechanical Applications

Published online by Cambridge University Press:  21 February 2011

J. Miao ,
B.L. Weiss ,
H.L. Hartnagel ,
R.J. Wilson  and
D. Ruck
J. Miao
Affiliation:
Institut fur Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstrasse 25, Darmstadt 64238, Germany Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B.L. Weiss
Affiliation:
Institut fur Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstrasse 25, Darmstadt 64238, Germany
H.L. Hartnagel
Affiliation:
Institut fur Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstrasse 25, Darmstadt 64238, Germany
R.J. Wilson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK
D. Ruck
Affiliation:
Gesellschaft fur Schwerionenforschung (GSI), Planckstrasse 1, D-64220, Darmstadt, Germany
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Abstract

A novel process for the fabrication of complex membrane structures in n-GaAs has been developed which utilises high energy nitrogen implantation and annealing to produce a semi-insulating etch stop layer and pulsed anodic etching for the selective removal of material. The process is versatile and can be used to produce complex, single crystal, stress-free, self-supporting membrane structures which are suitable for use as transducers operating up to ∼300°C. The semi-insulating properties of the membrane demonstrates its potential use as a substrate for electronic circuits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 853
Copyright
Copyright © Materials Research Society 1996

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